Photocurrent Defect Mapping in FET Analysis Layers

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Solution Overview

Problem

Field effect transistors suffer from defects due to differences in crystals, foreign substances, and physical characteristics during manufacturing, which are not effectively quantified or addressed in existing technologies, leading to potential performance issues.

Innovation Solution

A defect analysis device and method that includes a light source, position adjuster, detector, and analyzer to quantify defects by measuring photocurrents, providing quantitative data on defect state activation energy and density, and enabling repair through laser irradiation or process parameter adjustment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional defect detection methods are used, then defects can be detected, but quantitative analysis of defect characteristics cannot be achieved

Engineering Contradiction:

Improvedefect quantification accuracyVSAvoiddefect characteristic measurement complexity

Core Design Contradiction:

Measurement precisionVSDifficulty of detecting and measuring

Solution Approach 1:

The patent introduces light as an intermediary substance to interact with defects in the semiconductor layer. By irradiating defects with light and measuring the resulting photocurrent, the system converts invisible defect characteristics into measurable electrical signals, enabling quantitative analysis without direct contact with the defects.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces conventional mechanical or electrical testing methods with optical measurement. Instead of applying physical stress or electrical voltage to detect defects, the system uses light irradiation and photocurrent measurement, which is less invasive and provides more precise quantitative data about defect characteristics.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Productivity

If high density integration is implemented to increase transistor density, then productivity improves, but defect complexity and fineness increase

Engineering Contradiction:

Improvetransistor densityVSAvoiddefect detection precision

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by measuring photocurrent at different irradiation positions across the semiconductor layer. This allows the system to detect and characterize defects with high spatial resolution, identifying the specific location and properties of defects even in highly integrated structures where defects are fine and complicated.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent changes measurement parameters by varying light irradiation conditions and measuring resulting photocurrent characteristics. This enables the system to extract multiple defect parameters (such as defect density, activation energy, and capture cross-section) from a single measurement setup, achieving high precision defect characterization without increasing manufacturing complexity.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If light irradiation is used to analyze defects, then non-destructive measurement is achieved, but measurement time increases when scanning multiple areas

Engineering Contradiction:

Improvenon-destructive measurementVSAvoiddefect analysis time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent applies partial action by selectively irradiating specific areas of the semiconductor layer based on where defects are most likely to occur or where previous measurements indicated problems. This approach maintains the non-destructive nature of light irradiation while reducing the total measurement time by focusing on critical regions rather than scanning the entire area uniformly.

Inventive Principle:

Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables accurate and non-destructive quantification of defects, allowing for precise defect repair and optimization of manufacturing processes, thereby improving the quality and yield of field effect transistors.

Implementation Method 1

a light source configured to irradiate an analysis target layer of an element with light... a detector configured to measure a current value of current flowing between a source area of the element electrically connected to one end of the analysis target layer and a drain area of the element electrically connected to the other end of the analysis target layer

Methodology Applied

Scientific EffectPhotoelectric Effect: Photoelectric Effect

Data Source

PatentUS12449380B2Defect analysis device and defect analysis method using the same

Publication Date: 2025.10.21 SAMSUNG DISPLAY CO LTD

AI summary

Provided is a defect analysis device which may include a light source that irradiates an analysis target layer of an element with light, a position adjuster that adjusts a position in the analysis target in the analysis target to be irradiated with the light, a detector that measures a current value of current flowing between a source area of the element electrically connected to one end of the analysis target layer and a drain area of the element electrically connected to the other end of the analysis target layer in the element, and an analyzer that acquires quantitative data related to a defect in the analysis target layer on the basis of the current value in which, in a first mode, a plurality of areas of the analysis target layer are sequentially irradiated with the light.