Photodetecting Device With Adjustable Gate Voltage
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Solution Overview
Problem
Current photodetecting devices require multiple sensors for different applications due to material limitations, leading to signal saturation and noise issues, and often necessitate larger experimental setups for optimal performance.
Innovation Solution
A photodetecting device comprising a transistor, a silicon nano-channel, and a filter dye layer, where the silicon nano-channel connects the source and drain and is configured to receive light, allowing for adjustable parameters to enhance sensitivity and multifaceted applications, with the filter dye layer rearranging electron and hole positions to generate current differences for light intensity calculation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a photosensor with high sensitivity is used to observe normal light source, then the sensitivity is improved, but signal saturation occurs
Solution Approach 1:
The patent applies dynamics by making the photosensor's sensitivity adjustable through gate voltage control. The transistor's gate voltage can dynamically modulate the carrier concentration in the channel, allowing the sensor to adapt its sensitivity level. This enables the system to switch between high sensitivity mode (for weak light detection) and low sensitivity mode (for normal light observation), preventing signal saturation while maintaining measurement precision across different light conditions.
Solution Approach 2:
The patent implements parameter changes by varying the gate voltage to control the photosensor's operational characteristics. By changing the gate voltage parameter, the carrier concentration in the transistor channel is modified, which directly affects the photosensor's sensitivity. This parameter adjustment mechanism allows the system to optimize performance for different light intensity conditions, resolving the contradiction between high sensitivity and signal saturation.
2Reliability
If a photosensor with normal sensitivity is used to observe weak luminescence reaction, then signal saturation is avoided, but exposure time and integral time need to be extended
Solution Approach 1:
The dynamic gate voltage control enables the photosensor to operate in high sensitivity mode when detecting weak luminescence reactions. By adjusting the gate voltage to increase carrier concentration, the sensor's sensitivity is enhanced, allowing weak signals to be detected within normal exposure times without requiring time extension, thus resolving the time loss issue while maintaining reliability.
Solution Approach 2:
The patent uses parameter changes (gate voltage adjustment) to optimize the photosensor's sensitivity for weak light detection. By increasing the gate voltage, the carrier concentration and thus the sensitivity are enhanced, enabling the detection of weak luminescence reactions within standard exposure times without needing to extend exposure or integral time.
3Measurement precision
If different photosensors are selected for different applications, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent achieves universality by designing a single photosensor with adjustable sensitivity through gate voltage control. This multi-functional device can adapt to different application requirements (weak light detection, normal light observation, various wavelength ranges) by modifying the gate voltage, eliminating the need for multiple specialized sensors. The single device performs multiple functions that previously required separate sensors, reducing device complexity while maintaining application-specific optimization.
Solution Approach 2:
The dynamic gate voltage control mechanism enables a single photosensor to adapt its characteristics for different applications. By dynamically adjusting the gate voltage, the sensor can optimize its sensitivity and spectral response for various measurement conditions, replacing the need for multiple fixed-characteristics sensors. This dynamic adaptability reduces device complexity while preserving application-specific measurement precision.
4Measurement precision
If external optical design or photomultiplier tube is installed to achieve sensitivity adjustment, then measurement precision is improved, but device complexity and experimental space requirements increase
Solution Approach 1:
The patent merges the sensitivity adjustment function directly into the photosensor structure by using a transistor with gate voltage control. Instead of separating the sensor and control mechanisms into external components (such as external optical designs or photomultiplier tubes), the control functionality is integrated within the sensor itself. This integration reduces device complexity and eliminates the need for additional external components while maintaining the ability to adjust sensitivity for improved measurement precision.
Solution Approach 2:
The photosensor performs self-service by incorporating the sensitivity adjustment mechanism within its own structure. The gate voltage control is integrated into the transistor-based sensor, allowing it to autonomously adjust its sensitivity without requiring external optical designs or additional photomultiplier tube components. This self-contained approach reduces device complexity and experimental space requirements while achieving the desired measurement precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high sensitivity and dynamic parameter adjustment, enabling broad application fields by converting light signals into electrical signals and regulating element features through transistor control, improving detection accuracy and versatility.
Implementation Method 1
when incident light irradiates the surface of the semiconductor, electron-hole pairs are generated, causing the conductivity to increase, and the photoelectric current (Iph) increases accordingly
Implementation Method 2
The filter dye layer is over a light-receiving surface of the silicon nano-channel
Data Source
AI summary
A photodetecting device and method of using the same are provided. Light is used to irradiate the optical filter layer of the photodetecting device and positions of the electrons and the holes in the polycrystalline silicon nano-channel layer are rearranged by the light with a wavelength range capable of passing through the optical filter layer. The current between the source and the drain is changed by rearranging the positions of the electrons and the holes, so as to generate a current difference. The intensity of the light is calculated by the current difference.