Avalanche Photodiode Diffraction Structure for Small-Pixel Photon Detection
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Solution Overview
Problem
Existing image sensors, such as SiPM and SPAD, face challenges in maintaining photon detection efficiency due to reduced active avalanche initiation regions as pixel sizes decrease, leading to inefficient light absorption and detection.
Innovation Solution
Incorporating a diffraction structure adjacent to the photodiode that reflects photons back into the avalanche initiation region, utilizing metal or dielectric materials with varying refractive indices to optimize light distribution and enhance photon detection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If pixel size is decreased to increase sensor resolution, then the number of pixels increases, but the active avalanche initiation region area decreases leading to reduced photon detection efficiency
Solution Approach 1:
The patent introduces a temporal dimension to light-photon interaction by implementing a photon recycling mechanism. Photons that initially miss the active avalanche initiation region are reflected back by a diffraction grating structure, giving them multiple opportunities to be detected. This transforms a spatial limitation into a temporal process where undetected photons are redirected and re-attempted, effectively increasing detection probability without increasing pixel size.
Solution Approach 2:
The diffraction grating structure acts as an intermediary element between incident photons and the photodiode. This intermediary redirects photons that would otherwise be lost, channeling them back into the active region. The grating serves as a mediating structure that resolves the contradiction by providing an additional pathway for photon detection without requiring larger pixel dimensions.
2Productivity
If pixel size is decreased to increase sensor resolution, then more pixels can be packed into the sensor, but light absorption efficiency decreases due to smaller active regions
Solution Approach 1:
The patent implements continuous useful action through photon recycling. Instead of a single-pass detection model, the system continuously redirects undetected photons back into the active region through the diffraction grating. This creates a continuous detection process where photons multiple times interact with the active region until detected, maintaining high absorption efficiency even in small pixels.
Solution Approach 2:
The patent converts the harmful effect of photons missing the active region into a beneficial recycling opportunity. Rather than losing photons that miss the small active region, the diffraction grating reflects these photons back, transforming what would be energy loss into additional detection opportunities. This converts the harm of small pixel size into a benefit through systematic photon redirection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diffraction structure effectively spreads incident light over the active avalanche region, improving photon detection efficiency and overall sensor performance by directing photons away from inactive areas.
Implementation Method 1
The diffraction structure may be configured to reflect at least one of the plurality of photons back into the avalanche initiation region
Implementation Method 2
The diffraction structure may be configured to reflect at least one of the plurality of photons back into the avalanche initiation region
Implementation Method 3
The photodiode includes an avalanche initiation region and may be configured to generate an initial charge carrier using a particular photon
Implementation Method 4
The photodiode may be further configured to generate an avalanche current in response to a generation, by the initial charge carrier via impact ionization, of a plurality of additional charge carriers in the avalanche region
Data Source
AI summary
An image sensor pixel is disclosed. The sensor pixel includes a photodiode and a diffraction structure. The photodiode includes an avalanche region, and may generate an initial charge carrier using a particular photon received on a first side of the photodiode, and generate an avalanche current in response to a generation, by the initial charge carrier via impact ionization, of multiple additional charge carriers in the avalanche region. The diffraction structure is coupled to a second side of the photodiode opposite the first side, and is configured to reflect a given photon that has passed through the photodiode without generating a corresponding charge carrier, back into the avalanche region.


