Photodiode Memory Area Layout for Accurate Electron Readout

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Solution Overview

Problem

Photodiodes face challenges in efficiently storing and reading electron charges due to electrostatic potential barriers and storage pocket formation, which affects the accuracy of radiation detection and image formation.

Innovation Solution

The design incorporates memory areas with two electron storage regions connected by openings, where one opening is partially covered by a connection pad, and the other is not, with insulated conductive walls receiving negative voltage, allowing for efficient electron transfer and storage, and a method involving voltage changes to attract electrons to the storage regions for accurate reading.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple charge storage regions are coupled by openings, then electron storage capacity is improved, but electrostatic potential barriers and electron loss increase

Engineering Contradiction:
Improveelectron storage capacityVSAvoidelectron loss
Core Design Contradiction:
Quantity of substanceVSLoss of energy

Solution Approach 1:

An insulated conductive wall acts as an intermediary structure between multiple charge storage regions. This wall includes controlled openings that mediate electron transfer between regions while maintaining electrostatic isolation. The insulated conductive wall with its specific opening configuration enables selective electron passage, reducing unwanted electron loss while preserving storage capacity across multiple regions.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies parameter changes by dynamically controlling the electrostatic potential of the insulated conductive wall and its openings. By adjusting voltage parameters applied to the insulated conductive wall, the system can modify electrostatic potential barriers to control electron flow between storage regions. This enables optimization of electron transfer efficiency while minimizing electron loss during different operational phases.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If multiple charge storage regions are coupled by openings, then electron storage capacity is improved, but electrostatic potential barriers increase

Engineering Contradiction:
Improveelectron storage capacityVSAvoidelectrostatic potential management
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The charge storage system is segmented into multiple isolated regions connected through the insulated conductive wall with controlled openings. Each storage region can be independently managed while the insulated conductive wall provides a structured segmentation that simplifies overall potential management. This segmentation approach allows complex multi-region storage to be broken down into manageable units with standardized connection interfaces.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulated conductive wall serves as an intermediary structure that simplifies the management of electrostatic potentials between multiple storage regions. By providing a standardized mediating structure with controlled openings, the system reduces the complexity of directly managing potentials between all pairs of storage regions. The intermediary wall centralizes the potential management function in a single controllable element.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If connection pad covers first opening, then reading accuracy is improved, but electron transfer efficiency may be affected

Engineering Contradiction:
Improvereading accuracyVSAvoidelectron transfer efficiency
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The connection pad is applied selectively to cover only the first opening while leaving the second opening exposed. This local quality approach allows the reading function to be enhanced at the first opening location without completely blocking electron transfer. The asymmetric coverage creates different functional zones: one optimized for reading accuracy and another for electron transfer efficiency.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The system uses multiple openings as functional copies, where the first opening serves primarily for reading operations and the second opening maintains electron transfer capability. By having redundant opening structures, the system can dedicate one opening to high-precision reading while another preserves transfer efficiency, effectively copying the opening function to serve different operational needs simultaneously.

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances electron storage capacity and reading accuracy by reducing electrostatic potential barriers and preventing electron storage pockets, ensuring that the quantity of electrons read is representative of the scene, improving the overall performance of photodiodes in radiation detection and image formation.

Implementation Method 1

Photodiodes have the ability of detecting a light radiation, for example, in the optical domain, and of transforming it into an electric signal

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

difficulties in managing electrostatic potential barriers and electron storage pockets

Methodology Applied
Scientific EffectElectrostatic potential barrier: Electrostatics

Data Source

PatentUS20240170586A1Photodiode comprising a memory area
Publication Date: 2024.05.23 STMICROELECTRONICS (CROLLES 2) SAS
  • US20240170586A1 patent drawing
  • US20240170586A1 patent drawing
  • US20240170586A1 patent drawing

AI summary

The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.