Photodiode Memory Area Layout for Accurate Electron Readout

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Solution Overview

Problem

Photodiodes face challenges in efficiently storing and reading electron charges due to electrostatic potential barriers and storage pocket formation, which affects the accuracy of radiation detection and image formation.

Innovation Solution

The design incorporates memory areas with two electron storage regions connected by openings, where one opening is partially covered by a connection pad, and the other is not, allowing for improved electron transfer and reduced electrostatic potential barriers between storage regions, enabling better charge storage and reading.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple storage regions are connected by openings, then electron storage capacity is improved, but electrostatic potential barriers and storage pocket formation occur

Engineering Contradiction:
Improveelectron storage capacityVSAvoidreading accuracy
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies local quality by creating asymmetric coverage of openings with connection pads. Specifically, the first opening is covered by a connection pad while the second opening remains uncovered, allowing different regions to serve different functions: the covered opening facilitates electron transfer while the uncovered opening minimizes storage pocket formation and electrostatic potential barriers, thereby resolving the contradiction between storage capacity and reading accuracy

Inventive Principle:
Principle #3Local quality

2Speed

If connection pad covers first opening, then electron transfer is improved, but second opening must remain uncovered for accurate reading

Engineering Contradiction:
Improveelectron transfer rateVSAvoidasymmetric opening configuration
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent directly applies asymmetry by configuring the two openings differently: the first opening is covered by a connection pad to enhance electron transfer, while the second opening is deliberately left uncovered to prevent storage pocket formation and ensure accurate charge reading. This asymmetric design resolves the contradiction by accepting the increased device complexity as a necessary trade-off for achieving both fast electron transfer and accurate reading

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances electron storage capacity and reading accuracy by minimizing storage pockets and lowering electrostatic barriers, ensuring that the quantity of electrons read is representative of the scene, improving image formation in photodiodes.

Implementation Method 1

Photodiodes have the ability of detecting a light radiation, for example, in the optical domain, and of transforming it into an electric signal

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

one opening is partially covered by a connection pad, and the other is not, allowing for improved electron transfer and reduced electrostatic potential barriers between storage regions

Methodology Applied
Scientific EffectElectrostatic potential barrier reduction: Electrostatics

Data Source

PatentUS11923465B2Photodiode comprising a memory area
Publication Date: 2024.03.05 STMICROELECTRONICS (CROLLES 2) SAS
  • US11923465B2 patent drawing
  • US11923465B2 patent drawing
  • US11923465B2 patent drawing

AI summary

The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.