Photoelectric Conversion Element Buffer Layer Heat Resistance
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Solution Overview
Problem
Existing photoelectric conversion elements with organic layers face challenges in achieving both high barrier properties and heat resistance, particularly when using plasma-enhanced CVD methods, as exposure to NH3 gas and radicals deteriorates the organic layer's heat resistance.
Innovation Solution
A photoelectric conversion element is designed with a hydrogenated silicon oxide buffer layer and a hydrogenated silicon nitride or oxynitride protective film, both containing hydrogen ions, to prevent exposure to NH3 gas and radicals, ensuring heat resistance while maintaining barrier properties. The buffer layer is formed using a vapor phase method with specific thickness and refractive index ranges, and the protective film has a thickness of 30 to 500 nm with low internal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective film is formed by plasma-enhanced CVD using NH3 gas, then barrier properties are improved, but heat resistance deteriorates due to exposure to NH3 gas and radicals
Solution Approach 1:
The protective structure is divided into two separate layers: a buffer layer formed by plasma-enhanced CVD with NH3 gas exposure, and an organic layer protected from direct NH3 gas exposure. This segmentation allows the buffer layer to provide barrier properties while the organic layer maintains heat resistance.
Solution Approach 2:
The buffer layer acts as an intermediary between the NH3 gas environment and the organic layer. It absorbs the harmful effects of NH3 gas and radicals, protecting the organic layer from direct exposure while still allowing the protective film structure to provide barrier properties.
2Reliability
If the protective film thickness is increased to improve barrier properties, then barrier properties are improved, but internal stress increases
Solution Approach 1:
The protective structure is segmented into a thin buffer layer (1-100 nm) and a thicker protective film (30-500 nm). The buffer layer provides the necessary barrier properties with minimal thickness to reduce stress, while the protective film provides additional protection without requiring excessive thickness.
Solution Approach 2:
The buffer layer thickness is optimized to a specific range (1-100 nm) to achieve the right balance between barrier properties and stress management. This parameter optimization ensures sufficient protection while minimizing internal stress accumulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively enhances both barrier properties and heat resistance of the photoelectric conversion element, preventing deterioration and ensuring reliable performance under various conditions.
Implementation Method 1
The buffer layer is formed using a vapor phase method with specific thickness and refractive index ranges
Implementation Method 2
a protective film is formed on the organic photoelectric conversion layer by low temperature plasma-enhanced CVD
Data Source
AI summary
A photoelectric conversion element is formed by laminating, in order, a substrate, a lower electrode, an organic layer which generates electric charge by light irradiation, an upper electrode which transmits light, a buffer layer and a protective film. The buffer layer is formed from hydrogenated silicon oxide containing hydrogen ions, and has a thickness of 1 to 100 nm. The protective film contains hydrogenated silicon nitride containing hydrogen ions or hydrogenated silicon oxynitride containing hydrogen ions and has a thickness of 30 to 500 nm.