Photoelectric Conversion Element with Formula 1 Compound

The patent uses a composite photoelectric conversion layer containing both the specific compound of Formula (1) and an n-type semiconductor material. This composite structure achieves high photoelectric conversion efficiency by combining the advantages of both materials: the compound of Formula (1) provides excellent light absorption and charge generation, while the n-type semiconductor material enhances electron transport and overall conversion efficiency.

The patent modifies the chemical structure parameters of the photoelectric conversion material by introducing the specific compound of Formula (1) with defined molecular weight range (200-1000) and specific structural features (X1 and X2 as sulfur, oxygen, selenium, tellurium, or specific carbon groups). These parameter changes enhance the material's thermal stability and maintain responsiveness after heating, while the manufacturing process remains relatively simple through conventional deposition methods.