Photoelectric Conversion Element Electrode Insulation
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Solution Overview
Problem
In photoelectric conversion element manufacturing, the conductive material of the electrode can dissociate and adhere to the semiconductor layer during patterning, leading to leakage current issues due to exposure and adhesion of etching solutions.
Innovation Solution
A method involving forming an insulating layer that covers the electrode, creating an opening in the insulating layer to overlap the electrode, and patterning a semiconductor layer such that its outer edge is outside the inner edge of the opening, ensuring the electrode is covered and reducing the risk of conductive material adherence during semiconductor layer formation. Additionally, a stacked conductive layer configuration with a high light reflectivity second layer exposed enhances photoelectric conversion efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the conductive layer is exposed during patterning of the covering layer, then the patterning process can be performed, but the conductive material dissociates and adheres to the semiconductor layer forming leakage current paths
Solution Approach 1:
An insulating layer is introduced as an intermediary between the conductive layer and the covering layer. This insulating layer has an opening that exposes only the necessary portion of the conductive layer for electrical contact, while the insulating layer prevents etching solution from reaching and dissolving the conductive material during patterning processes.
Solution Approach 2:
The insulating layer is formed and configured with an opening before the covering layer is deposited and patterned. This preliminary configuration ensures that the conductive layer is protected from etching solutions during subsequent patterning operations, preventing conductive material dissolution and adhesion to the semiconductor layer.
2Reliability
If the electrode is completely covered by insulating layer, then conductive material adhesion is prevented, but light reflectivity and photoelectric conversion efficiency are reduced
Solution Approach 1:
The insulating layer is configured with a localized opening that exposes only the specific region of the conductive layer needed for electrical contact and light reflection. This local exposure maintains photoelectric conversion efficiency by allowing light to reach the conductive layer where it is needed, while the surrounding insulating layer continues to provide protection against conductive material adhesion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the likelihood of conductive material adherence to the semiconductor layer, minimizing leakage currents and achieving high-efficiency photoelectric conversion by ensuring the electrode is covered and utilizing light reflectivity for improved performance.
Implementation Method 1
a second layer of a second conductive material (e.g., aluminum) having high light reflectivity compared with the first conductive material
Data Source
AI summary
A method of manufacturing a photoelectric conversion element including a semiconductor layer includes: forming an electrode; forming an insulating layer covering the electrode; forming an opening in a region of the insulating layer overlapping the electrode in a plan view; forming a covering layer of a semiconductor material on a surface of the insulating layer; and forming the semiconductor layer by patterning the covering layer. In the forming of the semiconductor layer, the semiconductor layer is formed such that an outer circumferential edge of the semiconductor layer is located on the outside of an inner circumferential edge of the opening in the plan view.