Photoelectric Conversion Element Heat Resistance via Hansen Solubility
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Solution Overview
Problem
The external quantum efficiency (EQE) of photoelectric conversion elements deteriorates due to heat treatments during manufacturing and incorporation into devices, leading to reduced heat resistance.
Innovation Solution
The use of a bulk heterojunction type active layer with specific dispersive energy Hansen solubility parameters for p-type and n-type semiconductor materials, ensuring compatibility and preventing aggregation or crystallization during high-temperature processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If heat treatment is performed during manufacturing or device incorporation, then manufacturing process can be completed, but external quantum efficiency deteriorates
Solution Approach 1:
The patent applies parameter changes by carefully controlling the heat treatment temperature range (specifically keeping it below the onset temperature of aggregation and crystallization for the semiconductor materials used) to prevent deterioration of external quantum efficiency while still completing necessary manufacturing processes. This involves selecting and optimizing thermal processing parameters to avoid harmful phase transitions in the bulk heterojunction active layer.
2Ease of manufacture
If heat treatment is performed during manufacturing or device incorporation, then manufacturing process can be completed, but heat resistance is reduced
Solution Approach 1:
The patent improves heat resistance by optimizing the thermal stability parameters of the bulk heterojunction active layer through careful selection of semiconductor material combinations and their ratios. The composition is designed to maintain structural integrity and phase separation at elevated temperatures, preventing aggregation and crystallization that would otherwise occur during heat treatment processes.
Solution Approach 2:
The patent employs composite materials by combining p-type and n-type semiconductor materials in a bulk heterojunction structure with specific compositional ratios. This composite structure provides enhanced thermal stability and resistance to heat-induced degradation, allowing the device to withstand manufacturing heat treatments while maintaining photoelectric conversion performance.
3Productivity
If semiconductor materials are mixed in bulk heterojunction structure, then photoelectric conversion efficiency can be improved, but aggregation or crystallization occurs during heat treatment
Solution Approach 1:
The patent maintains phase separation structure stability by controlling the thermal processing parameters to remain below the aggregation and crystallization temperatures of the semiconductor materials. The composition ratios and material selection are optimized to ensure that the bulk heterojunction structure remains stable during heat treatment, preserving the nanoscale phase separation necessary for high photoelectric conversion efficiency.
Solution Approach 2:
The patent applies beforehand cushioning by designing the bulk heterojunction active layer with inherent thermal stability through careful material selection and composition optimization. This preventive design approach cushions against the harmful effects of heat treatment by establishing a composition that resists aggregation and crystallization before heat exposure occurs, thereby maintaining phase separation and photoelectric performance throughout the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the deterioration of EQE and reduces dark current, thereby enhancing the heat resistance of photoelectric conversion elements.
Implementation Method 1
Charges (holes and electrons) are generated in the active layer by energy (hν) of light incident on the active layer
Data Source
AI summary
Heat resistance is improved.A photoelectric conversion element 10 includes an anode 12, a cathode 16, and an active layer 14 provided between the anode and the cathode, in which the active layer contains at least one p-type semiconductor material and at least two n-type semiconductor materials, and a dispersive energy Hansen solubility parameter δD(P) of the at least one p-type semiconductor material and a first dispersive energy Hansen solubility parameter δD(Ni) and a second dispersive energy Hansen solubility parameter δD(Nii) of the at least two n-type semiconductor materials satisfy the following requirements (i) and (ii):2.1 MPa0.5<|δD(P)−δD(Ni)|+|δD(Ni)−δD(Nii)|<4.0 MPa0.5 Requirement (i):0.8 MPa0.5<|δD(P)−δD(Ni)| and 0.2 MPa0.5<|δD(Ni)−δD(Nii)| Requirement (ii):