Photoelectric Conversion Element With Controlled P-N Junction Area
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Solution Overview
Problem
Bulk heterojunction-type photoelectric conversion elements face challenges in achieving high photoelectric conversion efficiency due to insufficient photoinduced charge separation at the p-n junction, which is influenced by the area and phase separation of the n-type and p-type semiconductor interfaces.
Innovation Solution
A photoelectric conversion element is designed with an active layer comprising a mixture of n-type and p-type semiconductors, where the area of the p-n junction is controlled to be between 100 μm2 and 300 μm2 per 1 μm3, utilizing a bulk heterojunction structure and incorporating a fullerene derivative and polymer compound, with specific solubility ranges for the semiconductors to optimize phase separation and charge mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the area of p-n junction is increased to enhance photoinduced charge separation, then photoelectric conversion efficiency is improved, but disorder in charge transfer increases due to excessive phase separation
Solution Approach 1:
The patent applies parameter changes by precisely controlling the area of p-n junction within the range of 100-300 μm² per 1 μm³ of active layer. This quantitative parameter optimization ensures sufficient photoinduced charge separation while preventing excessive phase separation that would cause charge transfer disorder, thereby resolving the contradiction between efficiency and reliability
Solution Approach 2:
The patent implements partial action by achieving an optimal intermediate state of p-n junction area rather than maximizing it completely. By setting the area to 100-300 μm² per 1 μm³ (rather than maximizing without limit), the patent achieves sufficient charge separation while avoiding the harmful effects of excessive phase separation, thus balancing efficiency improvement with charge transfer reliability
2Productivity
If the area of p-n junction is too small in conventional elements, then manufacturing is simpler, but photoinduced charge separation is insufficient leading to low photoelectric conversion efficiency
Solution Approach 1:
The patent resolves this contradiction by establishing a specific parameter range for p-n junction area (100-300 μm² per 1 μm³). This quantitative specification transforms the qualitative requirement of 'sufficient charge separation' into a controllable manufacturing parameter, enabling efficient photoelectric conversion while providing clear fabrication guidelines
Solution Approach 2:
The patent applies preliminary action by pre-determining the optimal p-n junction area range before manufacturing. By establishing the 100-300 μm² per 1 μm³ specification in advance, the patent guides the fabrication process to achieve the desired performance, avoiding the need for complex post-manufacturing adjustments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances photoinduced charge separation and increases the photoelectric conversion efficiency, while maintaining a balance to prevent disorder in charge transfer, thereby achieving improved energy conversion performance.
Implementation Method 1
Since photoinduced charge separation occurs at the p-n junction, photoinduced charge separation is likely to occur by controlling the area of the p-n junction to 100 μm2 or more, and thus photoelectric conversion efficiency increases
Data Source
AI summary
Disclosed is a photoelectric conversion element comprising an anode, a cathode, and an active layer between the anode and the cathode, wherein the active layer includes an n-type semiconductor and a p-type semiconductor, and an area of a p-n junction between the n-type semiconductor and the p-type semiconductor is 100 μm2 or more per 1 μm3 of the active layer.