Photoelectric Conversion Layer Stack for Faster Imaging Response
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Solution Overview
Problem
Existing imaging devices face challenges in improving response speed.
Innovation Solution
Incorporating a work function adjustment layer with an electron affinity or work function larger than the first electrode and an electron block layer with anisotropic electric susceptibility of 413 or more or an intramolecular dipole moment of 1.84 debye or more between the organic layer and the work function adjustment layer, and an electron block layer with energy bending of 0.006 eV/nm or more and an energy level difference of 0.32 eV or more between the photoelectric conversion layer and the second electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a conventional imaging device structure is used, then the device complexity is low, but the response speed is insufficient
Solution Approach 1:
The patent segments the interface region between the photoelectric conversion layer and the electrode into multiple functional layers: an electron block layer with specific anisotropic electric susceptibility (≥413) or intramolecular dipole moment (≥1.84 debye), and a work function adjustment layer with electron affinity or work function larger than the first electrode. This segmentation allows each layer to perform its specific function optimally, improving response speed while maintaining manageable device complexity through modular design
Solution Approach 2:
The patent applies parameter changes by specifying critical material properties: the electron block layer must have anisotropic electric susceptibility of 413 or more or intramolecular dipole moment of 1.84 debye or more, and the work function adjustment layer must have electron affinity or work function larger than the first electrode. These parameter specifications optimize charge carrier blocking and energy level alignment, directly improving response speed without requiring fundamental structural changes
2Speed
If the electron block layer and work function adjustment layer are configured with specific material properties, then the energy difference increases improving response speed, but the manufacturing precision requirements increase
Solution Approach 1:
The patent defines specific parameter ranges for the electron block layer (anisotropic electric susceptibility ≥413 or intramolecular dipole moment ≥1.84 debye) and work function adjustment layer (electron affinity or work function larger than the first electrode). These parameter specifications create clear manufacturing targets that balance performance optimization with manufacturability, allowing standard fabrication processes to achieve the required precision
Solution Approach 2:
The work function adjustment layer acts as an intermediary between the electron block layer and the electrode, with its electron affinity or work function being larger than the first electrode. This intermediary layer facilitates optimal energy level alignment and charge carrier management, improving response speed while distributing the manufacturing complexity across multiple layers with well-defined properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the energy difference between the electron block layer and the work function adjustment layer, enhancing the internal electric field and improving the response speed of the photoelectric conversion element.
Implementation Method 1
an electron block layer provided between the organic layer and the work function adjustment layer and having an anisotropic electric susceptibility of 413 or more or an intramolecular dipole moment of 1.84 debye or more
Implementation Method 2
an electron block layer provided between the organic layer and the work function adjustment layer and having an anisotropic electric susceptibility of 413 or more or an intramolecular dipole moment of 1.84 debye or more
Implementation Method 3
a work function adjustment layer provided between the second electrode and the organic layer and having an electron affinity or a work function larger than a work function of the first electrode
Implementation Method 4
a work function adjustment layer provided between the second electrode and the organic layer and having an electron affinity or a work function larger than a work function of the first electrode
Implementation Method 5
an electron block layer provided between the second electrode and the photoelectric conversion layer and having an energy bending of 0.006 eV/nm or more and an energy level difference of 0.32 eV or more between the photoelectric conversion layer and the second electrode
Data Source
AI summary
There is provided a photoelectric conversion element, an imaging device, and an electronic apparatus that make it possible to improve a response speed. A first photoelectric conversion element (10) according to an embodiment of the present disclosure includes: a first electrode (11); a second electrode (16) disposed to be opposed to the first electrode (11); an organic layer (13) provided between the first electrode (11) and the second electrode (16) and including a hole-transporting material; a work function adjustment layer (15) provided between the second electrode (16) and the organic layer (13) and having an electron affinity or a work function larger than a work function of the first electrode (11); and an electron block layer (14) provided between the organic layer (13) and the work function adjustment layer (15) and having an anisotropic electric susceptibility of 413 or more or an intramolecular dipole moment of 1.84 debye or more.


