Photoelectric Conversion Element Layering for Stable Dark Current

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Solution Overview

Problem

Photoelectric conversion elements do not achieve sufficient reduction in dark current variation due to voltage applied, affecting their versatility across different devices.

Innovation Solution

A photoelectric conversion element configuration where the work function of the electron transportation layer and the cathode satisfy a specific relationship, and the active layer contains p-type and n-type semiconductor materials, with the electron transportation layer containing an insulating and semiconductor material, and using specific solvents for coating film curing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a single layer of electron transportation layer containing zinc oxide and PFN or PEI is used, then photoelectric conversion efficiency is improved, but dark current variation due to voltage applied is not sufficiently reduced

Engineering Contradiction:
Improvephotoelectric conversion efficiencyVSAvoiddark current variation
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The electron transportation layer is divided into two separate layers: a first electron transportation layer containing zinc oxide and a second electron transportation layer containing PFN or PEI. This segmentation allows each layer to perform its specific function optimally, with the first layer providing stable electron transport and the second layer controlling the work function to reduce dark current variation across different voltage conditions.

Inventive Principle:
Principle #1Segmentation

2Device complexity

If the work function relationship between electron transportation layer and cathode is not optimized, then device complexity is reduced, but dark current variation increases

Engineering Contradiction:
Improvelayer structure simplicityVSAvoiddark current stability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The invention optimizes the work function parameter by selecting specific materials for the second electron transportation layer (PFN or PEI) that satisfy the relationship Wf2-Wf1≥0.88 eV. This parameter control ensures stable dark current characteristics across different voltage conditions while maintaining a relatively simple two-layer structure.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces dark current variation, allowing the photoelectric conversion element to be more versatile across different devices and applications without requiring special design changes.

Implementation Method 1

at least one electron transportation layer provided between the active layer and the cathode

Methodology Applied
Scientific EffectElectron transport: Conduction (electrical)

Implementation Method 2

a work function of the one layer (Wf1) and a work function of the cathode (Wf2) satisfy the following Formula (1): Wf2−Wf1≥0.88 eV

Methodology Applied
Scientific EffectWork function relationship: Electrostatics

Implementation Method 3

The energy (hν) of light incident on the active layer generates charges (holes and electrons) in the active layer

Methodology Applied
Scientific EffectPhotoelectric conversion: Photovoltaic Effect

Data Source

PatentUS11910623B2Photoelectric conversion element and manufacturing method thereof
Publication Date: 2024.02.20 SUMITOMO CHEM CO LTD
  • US11910623B2 patent drawing
  • US11910623B2 patent drawing
  • US11910623B2 patent drawing

AI summary

To reduce the dark current ratio.A photoelectric conversion element 10 including an anode 16, a cathode 12, an active layer 14 provided between the anode and the cathode, and at least one electron transportation layer 13 provided between the active layer and the cathode, in whichthe electron transportation layer contains an insulating material and a semiconductor material;a difference between a work function of the electron transportation layer and a work function of the cathode is 0.88 eV or more;the active layer contains a p-type semiconductor material and an n-type semiconductor material; anda work function of the electron transportation layer (Wf1) and an energy level of a lowest occupied molecular orbital of the n-type semiconductor material (LUMO) satisfy the following Formula (2):|LUMO|−Wf1≥0.06 eV  (2).