Photoelectric Conversion Layout for Wider Dynamic Range Imaging
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Solution Overview
Problem
Imaging devices using CMOS sensors face challenges in dynamic range, image quality, power consumption, and productivity, particularly in portable devices like mobile phones.
Innovation Solution
The imaging device incorporates a photoelectric conversion element with n-type and p-type semiconductors, transistors, and capacitors, utilizing oxide semiconductors with specific wiring configurations to enhance dynamic range and reduce power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CMOS imaging sensors are used to achieve low price and high resolution, then manufacturing cost and resolution are improved, but dynamic range is insufficient
Solution Approach 1:
The imaging device divides the sensor into multiple regions with different photoelectric conversion elements (first and second photoelectric conversion elements), each optimized for different lighting conditions. This segmentation allows the system to handle both bright and dark areas effectively, improving dynamic range while maintaining the CMOS architecture for cost-effectiveness and high resolution.
Solution Approach 2:
Different photoelectric conversion elements are assigned to different regions based on local lighting conditions. The first photoelectric conversion element is optimized for certain conditions while the second is optimized for other conditions, allowing each region to have the quality needed for its specific function, thereby improving overall dynamic range.
2Manufacturing precision
If imaging device performance is improved for better image quality, then image quality is improved, but power consumption increases
Solution Approach 1:
The imaging device dynamically selects which photoelectric conversion element to use based on real-time lighting conditions. By switching between the first and second photoelectric conversion elements according to the actual imaging environment, the system maintains high image quality while minimizing power consumption by activating only the necessary elements.
Solution Approach 2:
The system changes operational parameters by switching between different photoelectric conversion elements with different characteristics. This allows optimization of power consumption by selecting the element that provides sufficient image quality for the current lighting conditions while consuming less power.
3Adaptability or versatility
If multiple photoelectric conversion elements are added to improve dynamic range, then dynamic range is improved, but device complexity increases
Solution Approach 1:
The imaging device merges multiple photoelectric conversion elements into a single integrated sensor structure. By combining the first and second photoelectric conversion elements within the same CMOS substrate and sharing common circuitry, the system improves dynamic range while minimizing the increase in device complexity through integrated design.
Solution Approach 2:
Both photoelectric conversion elements are designed to work within the same imaging device, with each element serving multiple functions depending on lighting conditions. This multi-functionality approach allows the system to achieve improved dynamic range without proportionally increasing device complexity, as the elements share common support structures and circuitry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides an imaging device with improved dynamic range, better image quality, lower power consumption, and higher productivity, suitable for portable electronic devices.
Implementation Method 1
The imaging device includes a photoelectric conversion element
Data Source
AI summary
A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.