Photoelectric Conversion Panel Film Structure for Hydrogen Venting
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Solution Overview
Problem
Photoelectric conversion panels face issues with moisture and hydrogen gas ingress leading to degradation of thin film transistors and photoelectric conversion elements, causing shifts in threshold voltage and increased off-leak currents.
Innovation Solution
A photoelectric conversion panel design featuring a first inorganic insulating film with a hole portion and a moisture-proof portion to release hydrogen gas and prevent moisture ingress, comprising a substrate, thin film transistor, photoelectric conversion element, and organic and inorganic films with specific hole and moisture-proof configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a hole portion is provided in the inorganic insulating film to release hydrogen gas, then hydrogen gas can escape and semiconductor reduction is prevented, but moisture enters through the hole portion and photoelectric conversion element characteristics deteriorate
Solution Approach 1:
The inorganic insulating film is segmented into multiple regions: a first region containing the hole portion for hydrogen release, and a second region forming a moisture-proof barrier. This segmentation allows the film to simultaneously provide hydrogen release pathways and moisture protection, resolving the contradiction between gas venting and moisture prevention.
Solution Approach 2:
Different regions of the inorganic insulating film are assigned different functional qualities: the first region has high permeability to hydrogen gas while the second region has high moisture resistance. This local differentiation enables each region to optimize its function, allowing hydrogen release without moisture ingress.
2Object-affected harmful factors
If the inorganic insulating film is made continuous to prevent moisture ingress, then photoelectric conversion element characteristics are maintained, but hydrogen gas accumulates and causes semiconductor reduction
Solution Approach 1:
The inorganic insulating film is divided into functionally distinct regions: a continuous second region for moisture blocking and a discontinuous first region with hole portions for hydrogen release. This segmentation resolves the contradiction by providing separate pathways for moisture prevention and gas escape.
Solution Approach 2:
The first region with hole portions acts as an intermediary structure that mediates between the need for moisture protection (provided by the continuous second region) and hydrogen gas release. The hole portions provide controlled gas escape without compromising the overall moisture barrier.
3Reliability
If the organic film is completely sealed to prevent moisture entry, then photoelectric conversion element reliability is improved, but hydrogen gas pressure builds up and causes semiconductor reduction
Solution Approach 1:
The sealing structure is segmented such that the inorganic insulating film contains both moisture-blocking regions and hydrogen release regions. This segmentation allows the organic film to be effectively sealed against moisture while providing controlled pathways for hydrogen gas pressure relief.
Solution Approach 2:
The hole portions in the inorganic insulating film convert the potentially harmful effect of hydrogen gas accumulation into a beneficial pressure relief mechanism. By providing controlled escape pathways, the structure prevents gas pressure buildup that would otherwise damage the semiconductor, while maintaining overall sealing integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents degradation of thin film transistors and photoelectric conversion elements by releasing hydrogen gas and blocking moisture, maintaining panel characteristics.
Implementation Method 1
the first inorganic insulating film includes a first hole portion connecting the first organic film and the second organic film
Implementation Method 2
a first moisture-proof portion at least a part of which is disposed at a side of the photoelectric conversion element with respect to the first hole portion, the first moisture-proof portion penetrating the first organic film
Data Source
AI summary
A photoelectric conversion panel includes a TFT, a photodiode disposed at an upper layer than the TFT, a first organic film formed at an upper layer than the photodiode, a first inorganic insulating film covering at least a part of the first organic film, and a second organic film covering at least a part of the first inorganic insulating film. The first inorganic insulating film includes a first hole portion connecting the first organic film and the second organic film, and a first moisture-proof portion at least a part of which is disposed at a side of the photodiode with respect to the first hole portion. The first moisture-proof portion penetrates the first organic film.