Photoelectric Detection Substrate With Fewer Patterning Steps

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Solution Overview

Problem

The complexity and cost of manufacturing photoelectric detection substrates are increased due to the large number of patterning processes required, which affects production cost and productivity, and the structural stability is compromised by thermal expansion and contraction during high-temperature curing.

Innovation Solution

A photoelectric detection substrate with a semiconductor layer directly formed on a base substrate, eliminating the need for intermediate flat layers and reducing the number of patterning processes, while incorporating an interdigital electrode with increased thickness and a light shielding metal layer for improved signal transmission and light absorption, and a wavelength conversion layer for non-visible light conversion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional manufacturing processes with multiple patterning steps are used, then photoelectric detection substrates can be produced, but the manufacturing complexity and production cost increase significantly

Engineering Contradiction:
Improvephotoelectric detection substrate qualityVSAvoidmanufacturing process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent removes the flat layer from the conventional manufacturing process. By directly forming the interdigital electrode on the semiconductor layer without requiring a flat layer, the number of patterning processes is reduced, simplifying the manufacturing process while maintaining substrate quality

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent combines the interdigital electrode formation process with the semiconductor layer processing. The interdigital electrode is directly patterned on the semiconductor layer, merging what were previously separate process steps into one integrated operation, thereby reducing overall process complexity

Inventive Principle:
Principle #5Merging (Combining)

2Manufacturing precision

If multiple patterning processes are implemented, then photoelectric detection substrates can be manufactured, but productivity decreases due to the large number of process steps

Engineering Contradiction:
Improvesubstrate structure accuracyVSAvoidproduction efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

By extracting and eliminating the flat layer from the process sequence, the patent reduces the total number of patterning steps. This directly increases productivity by reducing the time and process cycles required for manufacturing, while the direct formation method maintains structural accuracy

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent performs preliminary planning in the process design stage to eliminate unnecessary intermediate layers. By anticipating that the interdigital electrode can be directly formed on the semiconductor layer, the process is optimized beforehand to avoid subsequent rework or additional patterning steps

Inventive Principle:
Principle #10Preliminary action

3Ease of manufacture

If high-temperature curing processes are used, then flat layers can be formed, but structural stability deteriorates due to thermal expansion and contraction

Engineering Contradiction:
Improveflat layer formation capabilityVSAvoidsubstrate structural stability
Core Design Contradiction:
Ease of manufactureVSStability of the object's composition

Solution Approach 1:

The patent removes the flat layer that requires high-temperature curing from the device structure. By eliminating this layer entirely and allowing direct contact between the interdigital electrode and semiconductor layer, the source of thermal expansion/contraction problems is removed, preserving structural stability

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of forming a flat layer to protect the structure during manufacturing, the patent inverts the approach by directly forming the electrode on the semiconductor layer. This reverses the conventional sequence and eliminates the need for the problematic flat layer, thereby avoiding thermal stability issues

Inventive Principle:
Principle #13The other way round (Inversion)

4Reliability

If the interdigital electrode thickness is increased, then signal transmission improves, but manufacturing complexity increases

Engineering Contradiction:
Improvesignal transmission qualityVSAvoidelectrode structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent optimizes the interdigital electrode thickness as a key parameter to enhance signal transmission. By carefully selecting and controlling the thickness parameter within an optimal range, improved electrical performance is achieved without requiring complex multi-layer electrode structures or additional manufacturing processes

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This simplifies the manufacturing process, reduces production costs, enhances structural stability, and improves the detection efficiency by optimizing the interdigital electrode thickness and light utilization, leading to higher photocurrent and reduced dark current.

Implementation Method 1

a semiconductor layer arranged on the base substrate, wherein the semiconductor layer is configured to convert an optical signal into an electrical signal

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Implementation Method 2

a wavelength conversion layer configured to convert non-visible light into visible light

Methodology Applied
Scientific EffectWavelength conversion: Photoluminescence

Data Source

PatentUS12080812B2Photoelectric detection substrate and manufacturing method thereof, and photoelectric detection device
Publication Date: 2024.09.03 BEIJING BOE TECH DEV CO LTD
  • US12080812B2 patent drawing
  • US12080812B2 patent drawing
  • US12080812B2 patent drawing

AI summary

A photoelectric detection substrate and a manufacturing method thereof, and a photoelectric detection device are provided. The photoelectric detection substrate includes: a base substrate and a semiconductor layer arranged on the base substrate, wherein the semiconductor layer is configured to convert an optical signal into an electrical signal.