Photolithography Pattern Size Detection Method
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Solution Overview
Problem
Conventional photolithography size-detection methods for liquid crystal display panels lack precision, leading to inaccuracies in pattern size measurement, which affects the stability and quality of the array substrate, resulting in deviations from the original design.
Innovation Solution
A method that involves deriving function layer parameters and position parameters to create a thickness-profile and plane-profile of the detection-pattern, followed by size-detection and pattern adjustments based on intervals between detection-patterns and surrounding patterns, using a setup matrix to enhance precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional photolithography size-detection methods are used, then the detection process is simple, but the measurement precision is low
Solution Approach 1:
The patent segments the detection process into multiple distinct steps: deriving function layer parameters, deriving position parameters, deriving thickness-profile, deriving plane-profile, and performing size-detection. This segmentation allows each step to be optimized independently, improving overall measurement precision while maintaining manageable complexity through systematic organization.
Solution Approach 2:
The patent performs preliminary actions by deriving function layer parameters and position parameters before actual size-detection. The thickness-profile and plane-profile are derived in advance to prepare accurate detection data. These preliminary steps ensure that when size-detection is performed, the measurements are based on pre-processed, high-quality parameter data, thereby improving precision.
2Manufacturing precision
If conventional detection methods are used, then the manufacturing process is simple, but the manufacturing precision of photolithography patterns is poor
Solution Approach 1:
The patent implements feedback by using the derived function layer parameters and position parameters to inform and adjust the photolithography process. The detection results feed back into the manufacturing process, allowing for real-time adjustments to achieve the desired pattern dimensions. This closed-loop approach ensures high manufacturing precision by continuously verifying and correcting pattern sizes.
Solution Approach 2:
The patent utilizes multiple parameters (function layer parameters, position parameters, thickness-profile parameters, plane-profile parameters) to comprehensively characterize and control the photolithography patterns. By monitoring and adjusting these parameters, the system achieves precise control over pattern dimensions, directly improving manufacturing precision through parameter-based control.
3Reliability
If conventional size-detection methods are used, then the detection process is fast, but the reliability of pattern quality control is low
Solution Approach 1:
The patent performs preliminary derivation of function layer parameters and position parameters that can be reused for multiple detection operations. Once these fundamental parameters are established, subsequent size-detections can proceed more efficiently, reducing repeated computational overhead while maintaining high reliability through consistent parameter usage.
Solution Approach 2:
The patent transforms raw detection data into meaningful parameters (thickness-profile, plane-profile) that provide reliable quality indicators. These parameter transformations create a standardized assessment framework that improves reliability by consistently evaluating pattern quality across different detections, while the systematic parameter approach enables efficient processing.
Data Source
AI summary
The present invention provides a method for detecting a size of a pattern made by photolithography, which being applied for detecting a size of a pattern formed on an array substrate of a liquid crystal display including: deriving function layer parameters and position parameters of a detection-pattern; deriving a thickness-profile of the detection-pattern according to the function layer parameters and the position parameters of the detection-pattern; deriving a plane-profile of the detection-pattern according to the thickness-profile of the detection-pattern; proceeding a size-detection to the plane-profile of the detection-pattern.