Photolithography-Tailored Random Copolymer for Block Copolymer Patterning
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Solution Overview
Problem
Current semiconductor fabrication processes face challenges in precisely controlling the formation of self-assembled structures, particularly in defining isolated regions for vertical domain formation and reducing signal propagation issues due to increased interconnect resistivity and capacitance, which complicates the integration of self-assembly with deterministic photolithography.
Innovation Solution
The process involves tailoring the surface energy of a random copolymer film substrate using photolithography to control the formation of diblock copolymer domains in predefined areas, allowing for precise control over regional surface properties and simplified processing by applying actinic radiation to create a pattern that promotes domain formation only in specific regions, thereby enhancing the precision of self-assembled structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate patterning steps are used to create pre-existing patterns for self-assembled film formation, then the formation of self-assembled structures can be controlled, but the manufacturing process complexity increases
Solution Approach 1:
The patent combines deterministic photolithography patterning with self-assembled film formation into a single integrated process. The photolithographic pattern is directly transferred to the self-assembled film through a single exposure step, eliminating the need for separate patterning steps while maintaining precise control over domain formation locations.
Solution Approach 2:
The patent applies a photolithographic pattern to the substrate before self-assembly occurs. This pre-defined pattern serves as a template that guides the self-assembled film to form domains only in specific regions, allowing control over structure formation without requiring subsequent patterning steps.
2Speed
If interconnect dimensions are reduced to increase computational speed, then transistor scaling is achieved, but signal propagation control becomes more difficult due to increased resistivity and capacitance
Solution Approach 1:
The patent creates regions with different surface properties by applying photolithographic patterns. These patterned regions have modified surface energy characteristics that selectively promote or inhibit self-assembly, allowing local control over domain formation in specific interconnect regions while maintaining different properties in other areas.
Solution Approach 2:
The patent changes surface energy parameters of the substrate through photolithographic processing. By modifying surface properties in specific regions, the patent controls where self-assembled domains form, enabling precise spatial control over interconnect structures at reduced dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of precise self-assembled structures with reduced manufacturing steps, improving the control over domain formation and addressing signal propagation issues by ensuring domains form only in predefined areas, thus enhancing the performance of semiconductor components.
Implementation Method 1
tailoring the surface energy of a random copolymer film substrate using photolithography to control the formation of diblock copolymer domains in predefined areas, allowing for precise control over regional surface properties and simplified processing by applying actinic radiation to create a pattern
Implementation Method 2
forming a self assembled structure in the diblock copolymer film... promotes domain formation in the diblock copolymer film only in predefined areas
Data Source
AI summary
A self assembly step for the manufacture of an electronic component comprising, e.g., a semiconductor chip or semiconductor array or wafer comprises forming a block copolymer film placed on a random copolymer film substrate operatively associated with the electronic component and the block copolymer film wherein the surface energy of the random copolymer film is tailored by use of a photolithographic or chemical process prior to the self assembly step. By prior deterministic control over regional surface properties of the random copolymer film, domains of the block copolymer film form only in predefined areas. This approach offers simplified processing and a precise control of regions where domain formation occurs. Selective removal of some of the domains allows for further processing of the electronic component.