Resist compound and underlayer compound for photolithography, multilayered structure formed using the same, and method for manufacturing semiconductor devices using the same
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Solution Overview
Problem
Current photolithography technologies face challenges in achieving high resolution and sensitivity for miniaturized semiconductor patterns while preventing resist pattern collapse, especially as semiconductor devices become more integrated and downsized.
Innovation Solution
The development of a resist compound and an underlayer compound, where the underlayer compound includes a cellulose structure with hydroxyl and vinyl silyl groups, and the resist compound features an alkylated metal oxide nanocluster with a counter anion, allowing for improved adhesion and solubility differences to enhance pattern resolution and sensitivity, and prevent pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography processes are used for miniaturized patterns, then manufacturing process is simple, but resolution and sensitivity deteriorate and pattern collapse occurs
Solution Approach 1:
An underlayer compound comprising a cellulose structure with hydroxyl groups and vinyl silyl groups is introduced as an intermediary between the substrate and the photoresist layer. This underlayer mediates the interaction between the photoresist and substrate, improving adhesion and enabling high-resolution pattern formation without requiring complex process modifications
Solution Approach 2:
The underlayer compound combines cellulose structure with hydroxyl groups and vinyl silyl groups to create a composite material that exhibits both hydrophilicity (for good adhesion) and reactivity (for crosslinking with photoresist). This composite structure enables simultaneous achievement of high resolution and pattern stability
2Ease of manufacture
If photoresist layer is applied using hydrophobic solvent, then application is simple, but underlayer damage occurs
Solution Approach 1:
The underlayer compound is designed with specific chemical parameters (cellulose structure, hydroxyl groups, vinyl silyl groups) that enable it to resist dissolution by hydrophobic solvents while maintaining adhesion. The chemical composition parameters are optimized to prevent damage during photoresist application
Solution Approach 2:
The underlayer acts as a protective sacrificial layer that can be selectively removed after serving its purpose of enabling high-resolution patterning. It protects the substrate during the photolithography process and can be discarded after pattern transfer is complete
3Productivity
If line width is miniaturized for high integration, then device integration increases, but pattern collapse increases
Solution Approach 1:
The underlayer is formed in advance before photoresist coating, creating a pre-prepared surface that enhances photoresist adhesion and structural support. This preliminary action prevents pattern collapse during subsequent processing steps by establishing strong interfacial bonding beforehand
Solution Approach 2:
The underlayer provides localized structural support and adhesion enhancement specifically at the interface between photoresist and substrate. The vinyl silyl groups locally react with photoresist to create strong anchoring points, preventing collapse of miniaturized patterns while maintaining overall pattern integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed compounds and method improve the resolution and sensitivity of resist patterns, reduce the dosage required for pattern formation, and prevent underlayer damage during photolithography processes, thereby enhancing the manufacturing efficiency of semiconductor devices.
Implementation Method 1
the underlayer compound may include a cellulose structure having at least one hydroxyl group (—OH) and at least one vinyl silyl group
Implementation Method 2
exposing a resist layer to a specific wavelength of light to induce the change of the chemical structure of the resist layer
Implementation Method 3
the selective removing of the exposed part or the unexposed part of the resist layer by using a solubility difference between the exposed part and the unexposed part
Data Source
AI summary
Provided are a resist compound and an underlayer compound, which may improve the resolution and sensitivity of a resist pattern and restrain the collapse of the resist pattern. The underlayer compound includes a cellulose structure having at least one hydroxyl group (—OH) and at least one vinyl silyl group. The resist compound includes an alkylated metal oxide nanocluster having a counter anion.