Photomask Displacement Error Correction Map
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Solution Overview
Problem
There is a displacement error between the target pattern and the real pattern formed in photomasks, which affects the accuracy of pattern formation on wafers, requiring correction to achieve a layout similar to the desired target pattern.
Innovation Solution
A method is introduced that involves designing a target pattern, modeling displacement errors, generating a displacement error correction map, and using this map to correct the layout before performing exposure and etching processes on a blank mask to form the photomask, thereby reducing the error between the target and real patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a photomask is manufactured based on a corrected layout after OPC, then the layout design can be optimized for desired pattern shape, but a displacement error occurs between the target pattern and the real pattern formed in the photomask
Solution Approach 1:
The patent applies preliminary action by performing displacement error correction on the layout design before manufacturing the photomask. A displacement error correction map is generated and applied to adjust the target pattern layout in advance, so that when the photomask is manufactured and used, the real pattern formed on the wafer closely matches the desired target pattern, thereby resolving the displacement error issue.
2Manufacturing precision
If displacement error correction is applied to the layout, then the accuracy of pattern formation is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent uses an intermediary approach by introducing a displacement error correction map as a mediator between the target pattern layout and the actual photomask manufacturing process. This correction map contains pre-calculated displacement error data that is applied during the layout correction stage, allowing the complex displacement error compensation to be encapsulated in an intermediate data structure rather than complicating the entire manufacturing process.
Data Source
AI summary
In a method of manufacturing a photomask, a layout of a target pattern to be formed in the photomask may be designed. A modeling of a displacement error of the target pattern may be performed and a displacement error correction map of the target pattern may be generated based on the modeling of the displacement error of the target pattern. An exposure process may be performed on a blank mask in reflection of the displacement error correction map of the target pattern. A developing process and an etching process may be performed on the blank mask to form the photomask.