3D Photomask Layout Generation for Optical Aberration Control

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Solution Overview

Problem

Current photomask layout designs fail to effectively address optical issues such as flares and distortions during the photolithography process, despite efforts to increase depth-of-focus through varying pattern thicknesses.

Innovation Solution

A calculation method is developed to generate a 3-D layout pattern in photomasks by simulating and correcting two-dimensional geometric patterns, marking some as 'marked' and others as 'non-marked' to create alternating patterns along the z-axis, which are then used to fabricate photomasks with different z-axis values, thereby addressing optical problems.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If layout patterns are designed with different thicknesses to increase depth-of-focus, then exposure resolution is improved, but optical problems such as flares and distortions cannot be effectively solved

Engineering Contradiction:
Improveexposure resolutionVSAvoidoptical problems (flares and distortions)
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent transitions from traditional 2-D photomask patterns to 3-D patterns by adding vertical dimension through multiple layers at different z-axis positions. This dimensional change allows light to be modulated from multiple depths, effectively reducing optical aberrations like flares and distortions while maintaining exposure resolution. The 3-D patterns create more complex optical paths that interfere destructively with unwanted diffraction orders.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs composite photomask structures combining multiple pattern layers with different optical properties (phase shifters, absorbers, and pattern layers) arranged in specific configurations. These composite structures work together to simultaneously achieve high contrast, phase modulation, and suppression of optical defects, resolving the contradiction between resolution and optical quality.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If traditional 2-D layout patterns are used, then manufacturing is simpler, but optical problems like flares and distortions occur

Engineering Contradiction:
Improvephotomask fabrication simplicityVSAvoidoptical problems (flares and distortions)
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent divides the photomask pattern into multiple segmented layers at different z-axis positions, where each layer contributes specific functions. This segmentation allows complex optical correction to be achieved through simpler individual layers that can be manufactured separately and then combined, maintaining ease of manufacture while eliminating optical defects.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

By adding the z-axis dimension with multiple pattern layers, the patent creates 3-D photomask structures that can be fabricated using extended lithographic processes. The additional vertical dimension provides new degrees of freedom for optical control without fundamentally complicating the manufacturing approach, as each layer can be processed similarly to traditional 2-D patterns.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS8954919B1Calculation method for generating layout pattern in photomask
Publication Date: 2015.02.10 UNITED MICROELECTRONICS CORP
  • US8954919B1 patent drawing
  • US8954919B1 patent drawing
  • US8954919B1 patent drawing

AI summary

A calculation method for generating a layout pattern in a photomask includes at least the following steps. A two-dimensional design layout including several geometric patterns distributed in a plane is provided to a computer system. The computer system is used to mark portions of the geometric patterns and generate at least one marked geometric pattern and at least one non-marked geometric pattern. The marked geometric pattern is then simulated and corrected by the computer system so as to generate a 3-D design layout. Through the simulation and correction, the marked geometric pattern and the non-marked geometric pattern are arranged alternately along an axis orthogonal to the plane. The 3-D design layout is outputted to a mask-making system afterwards.