Photomask Layout Pattern with Auxiliary Ladder Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing is the photoresist collapse caused by asymmetric pattern distribution during the lithographic process, leading to defects and reduced product yield due to differing surface tensions on either side of the photoresist layer.
Innovation Solution
A layout pattern featuring a ladder structure formed by auxiliary patterns connecting the outermost main patterns, which are arranged in parallel and extend in a specific direction, enhancing stability and preventing photoresist collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If asymmetric pattern distribution is used in the layout pattern, then device integrity and small-sized high-integrity devices are achieved, but photoresist collapse occurs due to asymmetric surface tensions
Solution Approach 1:
The patent applies asymmetry principle by intentionally introducing auxiliary patterns that create asymmetric structural support on one side of the main patterns. This asymmetric support structure compensates for the asymmetric surface tension forces acting on the photoresist, thereby preventing collapse while maintaining the required asymmetric device layout for high integrity circuits
Solution Approach 2:
The auxiliary patterns serve as intermediary structures between the main patterns and the substrate. These intermediary elements provide additional mechanical support and distribute the surface tension forces, preventing direct collapse of the main patterns while allowing the asymmetric device configuration to be maintained
2Productivity
If the distance between devices is shortened to increase integration, then device density improves, but photoresist collapse becomes more severe due to enhanced asymmetric surface tension effects
Solution Approach 1:
The patent segments the pattern structure by introducing auxiliary patterns that divide and distribute the mechanical load across multiple support points. This segmentation allows shorter device spacing while maintaining sufficient structural support to prevent photoresist collapse, enabling higher device integration without sacrificing manufacturing precision
3Reliability
If auxiliary patterns are added to prevent photoresist collapse, then photoresist stability improves, but layout pattern complexity increases
Solution Approach 1:
The auxiliary patterns are strategically placed only in specific locations where surface tension forces cause maximum stress, rather than uniformly across the entire layout. This local quality approach provides necessary photoresist stability while minimizing the overall complexity increase of the layout pattern
Data Source
AI summary
A layout pattern and a photomask including the layout pattern are provided. The layout pattern includes a plurality of main patterns and at least one auxiliary pattern. The main patterns are arranged in parallel to one another and extend in a first direction. The at least one auxiliary pattern is located between two outermost main patterns and connects the two outermost main patterns. The at least one auxiliary pattern is arranged in a second direction. The second direction is different from the first direction.