Photomask Set Layout Splitting for Precise Semiconductor Patterning

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Solution Overview

Problem

The increasing complexity of semiconductor device manufacturing due to the need for high integration and decreasing design rules poses challenges in forming patterns, particularly in creating precise layouts for photomasks that effectively guide the formation of bit-line structures, landing pads, and storage nodes.

Innovation Solution

A method of manufacturing a photomask set involving the preparation of a mask layout with specific pattern configurations, including island-shaped and line-shaped patterns, which are split into even and odd layouts to form photomasks. These photomasks are used to create bit-line structures, landing pads, and storage nodes with precise geometries, such as scalene triangles and honeycomb shapes, to facilitate efficient patterning and integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a single photomask is used for pattern formation, then the manufacturing process is simpler, but the precision and accuracy of complex geometries cannot be achieved

Engineering Contradiction:
Improvepattern formation precisionVSAvoidphotomask structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent divides a single complex photomask into multiple separate photomasks (first photomask, second photomask, third photomask) that can be manufactured and handled independently. Each photomask contains specific pattern components that are combined through multiple exposure steps to achieve the final complex geometry, thereby improving manufacturing precision while managing complexity through systematic division

Inventive Principle:
Principle #1Segmentation

2Productivity

If design rules are decreased for high integration, then device integration increases, but the difficulty of forming patterns increases

Engineering Contradiction:
Improvedevice integrationVSAvoidpattern formation difficulty
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent introduces an additional dimensional aspect by using multiple photomasks stacked in sequence rather than relying solely on planar pattern complexity. This allows patterns to be formed through cumulative exposure across multiple layers, effectively adding a temporal/expositional dimension to the patterning process, which enables high integration while maintaining ease of manufacture through standardized repeated steps

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If multiple photomasks are used for precise patterning, then pattern precision improves, but the manufacturing process becomes more complex

Engineering Contradiction:
Improvepattern geometry precisionVSAvoidphotomask set complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent employs asymmetric arrangement of patterns across different photomasks, where each photomask contains specifically designed asymmetric pattern components that complement each other. The first photomask contains bit-line patterns, the second contains landing pad patterns, and the third contains storage node patterns, with each asymmetrically positioned to achieve precise final geometries when combined, reducing overall system complexity through functional specialization

Inventive Principle:
Principle #4Asymmetry

Data Source

PatentUS11740553B2Method of manufacturing photomask set for forming patterns
Publication Date: 2023.08.29 SAMSUNG ELECTRONICS CO LTD
  • US11740553B2 patent drawing
  • US11740553B2 patent drawing
  • US11740553B2 patent drawing

AI summary

A method of manufacturing a photomask set includes: preparing a mask layout, the mask layout including a plurality of first layout patterns apart from one another in a first region, wherein distances between center points of three first layout patterns adjacent to one another from among the plurality of first layout patterns respectively have different values; grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts.