Photomask Non-Printing Features Bridge Density Gaps

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Solution Overview

Problem

Current photomask designs in the semiconductor industry are inadequate in addressing distortions caused by diffraction during lithography, leading to suboptimal pattern formation on semiconductor wafers, and do not effectively manage debris particles, which affects the longevity and performance of photomasks.

Innovation Solution

The introduction of non-printing feature insertion (NPI) regions in the photomask design, where non-printing features are inserted in isolated areas to bridge density gaps between dense and isolated regions, and to attract and trap debris particles, thereby improving pattern density and extending photomask lifespan.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photomask designs use conventional patterns without non-printing features, then the manufacturing process is simpler, but pattern formation precision deteriorates due to density gaps between dense and isolated regions

Engineering Contradiction:
Improvepattern formation precisionVSAvoidphotomask structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

Non-printing features are introduced as intermediary elements between dense and isolated printing features. These intermediary features bridge the density gap by providing intermediate density values, enabling smoother density transitions and reducing etching behavior differences without directly affecting the printed pattern on the wafer.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The photomask is divided into different regions with locally optimized characteristics. Non-printing features are selectively inserted in specific isolated regions where density gaps exist, while leaving other regions unchanged. This local modification approach improves pattern formation precision only where needed without unnecessarily complicating the entire photomask structure.

Inventive Principle:
Principle #3Local quality

2Duration of action of stationary object

If photomask designs include non-printing features, then debris particle management improves and photomask lifespan extends, but the photomask structure becomes more complex

Engineering Contradiction:
Improvephotomask operational lifespanVSAvoidphotomask structure complexity
Core Design Contradiction:
Duration of action of stationary objectVSDevice complexity

Solution Approach 1:

Non-printing features convert the harmful effect of debris accumulation into a beneficial trapping mechanism. By providing dedicated non-critical regions with non-printing features, debris particles are attracted to and trapped in these areas instead of accumulating on critical printing features, thereby extending photomask operational lifespan while isolating the complexity to non-essential structures.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Stability of the object's composition

If non-printing features are inserted to bridge density gaps, then etching behavior uniformity improves, but the photomask design complexity increases

Engineering Contradiction:
Improveetching behavior uniformityVSAvoidphotomask pattern complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The density parameter is modified by inserting non-printing features in isolated regions. By changing the local density parameter in specific areas without affecting printing features, the etching behavior uniformity across the photomask is improved. The non-printing features provide intermediate density values that create a more uniform density distribution, leading to consistent etching rates across different regions.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances pattern formation precision, reduces etching behavior differences between dense and isolated regions, and effectively prolongs the photomask's operational time by preventing debris accumulation on critical features.

Implementation Method 1

non-printing features are inserted in isolated areas to bridge density gaps between dense and isolated regions, and to attract and trap debris particles

Methodology Applied
Scientific EffectElectrostatic attraction: Electrostatics

Implementation Method 2

optical proximity correction (OPC) and inserts various OPC patterns to compensate for distortions caused by diffraction of radiation that occurs during the use of a lithography tool

Methodology Applied
Scientific EffectDiffraction: Diffraction

Data Source

PatentUS11143954B2Mask patterns and method of manufacture
Publication Date: 2021.10.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11143954B2 patent drawing
  • US11143954B2 patent drawing
  • US11143954B2 patent drawing

AI summary

Photomasks and methods of fabricating the photomasks are provided herein. In some examples, a layout for forming an integrated circuit device is received. The layout includes a set of printing features. A region of the layout is identified. The region is at a distance from the set of printing features such that an exposure region associated with a feature in the region does not affect a set of exposure regions associated with the set of printing features. A plurality of non-printing features is inserted into the region. A photomask is fabricated based on the layout.