Photomask Layout OPC Using Manufacturing Feedback for MRC and EPE

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Solution Overview

Problem

Existing optical proximity correction (OPC) methods fail to effectively address mask rule check (MRC) violations and edge placement errors (EPE) in photomask layouts, leading to inaccuracies in pattern transfer during semiconductor manufacturing.

Innovation Solution

A method that includes determining target patterns, simulating photomask layouts, applying biases for correction, and selecting control parameters to deform layouts, while checking for MRC violations and EPE, using actual photomask manufacturing data to refine the process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional OPC methods are used to correct photomask layouts, then some pattern accuracy is improved, but MRC violations and EPE remain unaddressed leading to manufacturing defects

Engineering Contradiction:

Improvepattern transfer accuracyVSAvoidMRC compliance and EPE control

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies preliminary action by performing MRC checks and EPE calculations at multiple stages during the OPC process, rather than only after final correction. The system evaluates layout candidates before finalizing corrections, preventing MRC violations and controlling EPE proactively throughout the correction workflow

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback mechanisms by continuously monitoring MRC compliance and EPE values during the OPC process. The system uses measured data from actual photomasks to provide feedback on correction accuracy, adjusting subsequent corrections based on observed deviations and validation results to maintain both precision and reliability

Inventive Principle:

Principle #23Feedback

2Manufacturing precision

If multiple validation checks are performed during OPC, then manufacturing precision is improved, but process complexity increases

Engineering Contradiction:

Improvelayout accuracyVSAvoidOPC process complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent segments the validation process into distinct, modular components: MRC violation checking, EPE calculation on contour patterns, and tolerance comparison. Each validation function operates independently and can be applied selectively at different OPC stages, reducing overall process complexity while maintaining comprehensive validation

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies partial validation actions by performing EPE calculations only on critical contour patterns and MRC checks only on relevant layout features rather than exhaustive checking of all elements. This selective validation approach maintains manufacturing precision while reducing computational complexity and processing time

Inventive Principle:

Principle #16Partial or excessive action

Data Source

PatentUS12541635B2Method for optical proximity correction of photomask layout utilizing parameters obtained through actual photomask manufacture

Publication Date: 2026.02.03 SAMSUNG ELECTRONICS CO LTD

AI summary

A mask layout optical proximity correction (OPC) method includes determining a target pattern to be formed on a substrate, simulating a photomask layout based on the target pattern, applying a bias to the simulated photomask layout, thereby correcting the photomask layout into a first modeling layout, and selecting one of control parameters obtained through modeling using a layout of a split mask, thereby deforming the first modeling layout into a second modeling layout, and checking whether or not there is a mask rule check (MRC) violation, based on the second modeling layout.