Photo-mask Pattern Transformation for Ion Implantation
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Solution Overview
Problem
In semiconductor manufacturing, existing photolithography processes face challenges in reducing critical dimensions and improving process windows, particularly due to the proximity of target elements to patterned masks, which can lead to insufficient ion implantation and increased resistivity in semiconductor devices.
Innovation Solution
A method is developed to transform a first pattern on a photo-mask into a second pattern, where the light-transmitting regions are expanded and the light-shielding regions are contracted, ensuring the target elements are farther from the patterned mask, thereby preventing material dropout and ion blocking, and allowing for a larger process window without requiring high-resolution exposure machines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the target elements are placed close to the patterned mask to reduce critical dimension, then the circuit size becomes smaller, but material dropout and ion blocking occur leading to insufficient ion implantation and increased resistivity
Solution Approach 1:
The photo-mask pattern is segmented into multiple discrete patterned masks with spacing between them. This segmentation allows each mask to be positioned at an optimal distance from target elements, preventing material dropout and ion blocking while maintaining small critical dimensions through precise spatial arrangement
Solution Approach 2:
The solution transitions from a single-dimensional close-proximity arrangement to a multi-dimensional spaced configuration. By distributing patterned masks across multiple positions and orientations, the invention achieves both small critical dimensions and adequate spacing to prevent ion blocking and material dropout
2Manufacturing precision
If high-resolution exposure machines are used to achieve smaller critical dimensions, then the manufacturing precision improves, but the device complexity and process cost increase
Solution Approach 1:
The complex high-resolution exposure task is segmented into multiple simpler exposure steps, each creating a portion of the final pattern. This allows the use of lower-resolution exposure machines for each step while achieving the overall precision needed through the combined spaced patterned mask configuration
Solution Approach 2:
The invention changes the spatial parameters of the photo-mask pattern (spacing, distribution, and arrangement of patterned masks) to enable the use of lower-resolution exposure machines. By optimizing these parameters, the system achieves adequate manufacturing precision without requiring complex high-resolution equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents material dropout and ion blocking, enhances ion implantation uniformity, and reduces resistivity, while also decreasing process costs by allowing for a larger process window and lower exposure requirements.
Implementation Method 1
The second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region
Implementation Method 2
exposing the photo-resist layer by using the photo-mask, and developing the exposed photo-resist layer to form a patterned photo-resist
Implementation Method 3
performing an ion implantation process to the material layer by using the patterned mask
Data Source
AI summary
A method for forming a photo-mask includes providing a first pattern, wherein the first pattern includes a first light-transmitting region and a first light-shielding region; transforming the first pattern into a second pattern, wherein the second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region, and the second light-transmitting region has an area which is smaller than that of the first light-transmitting region, the second light-shielding region includes the entire region of the first light-shielding region, and the second light-shielding region has an area which is greater than that of the first light-shielding region; and forming the second pattern on a photo-mask substrate to form a photo-mask, wherein the photo-mask is used in an ion implantation process of a material layer.