Photomask Proximity Correction for Circuit Connectivity
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Solution Overview
Problem
Conventional optical projection lithography faces challenges in implementing complex semiconductor circuit designs due to spatial bandwidth constraints and the difficulty in forming patterns at the nanometer scale, leading to complicated designs that are hard to implement and require extensive data processing for proximity correction.
Innovation Solution
A method for preparing photomask patterns involves receiving drawn pattern data, generating mask pattern data, and performing proximity correction to retarget the patterns for improved coverage and connectivity, allowing for simplified design inputs and downstream optimization of target patterns to achieve desired functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If designers create complex patterns to achieve desired circuit functionality, then the circuit design capability is improved, but the implementability by mask makers deteriorates due to spatial bandwidth constraints and nanometer-scale patterning difficulties
Solution Approach 1:
The system performs preliminary actions by automatically generating optimized photomask patterns from high-level circuit designs before the actual patterning process. The proximity correction software pre-calculates and adjusts pattern details to account for optical effects, ensuring manufacturability while preserving design intent without requiring manual intervention at the nanometer scale
Solution Approach 2:
The invention introduces an intermediary software layer between circuit designers and mask makers. This intermediary system automatically translates high-level circuit designs into optimized photomask patterns, handling the complex transformations required by spatial bandwidth constraints and optical proximity effects, thereby decoupling the design and manufacturing processes
2Ease of manufacture
If designers follow complex design rules to work around lithography constraints, then the implementability is improved, but the design complexity and time required for pattern formation increase
Solution Approach 1:
The proximity correction software performs self-service by automatically analyzing and optimizing the photomask patterns based on the circuit design and optical characteristics. The system self-adjusts pattern dimensions, positions, and shapes to account for proximity effects, eliminating the need for designers to manually apply complex design rules while maintaining manufacturability
Solution Approach 2:
The system automatically changes critical pattern parameters such as line width, spacing, and feature dimensions based on optical proximity effects. The software dynamically adjusts these parameters to optimize pattern transfer while maintaining manufacturability, replacing manual design rule compliance with automated parameter optimization
3Ease of manufacture
If manual redrawing of target patterns is performed to simplify implementation, then the manufacturability is improved, but the time required for data processing and pattern formation increases
Solution Approach 1:
The invention replaces the mechanical process of manual pattern redrawing with an automated computational system. The proximity correction software automatically processes design data, generates optimized photomask patterns, and handles all necessary transformations, eliminating manual intervention and significantly reducing data processing time while maintaining pattern simplification for manufacturability
Data Source
AI summary
The present disclosure is directed a method for preparing photomask patterns. The method comprises receiving drawn pattern data for a design database. The drawn pattern data describes first device features and second device features, the second device features being associated with design specifications for providing a desired connectivity of the first device features to the second device features. At least a first plurality of the first device features have drawn patterns that will not result in sufficient coverage to effect the desired connectivity. Photomask patterns are formed for the first device features, wherein the photomask patterns for the first plurality of the first device features will result in the desired coverage. Integrated circuit devices formed using the principles of the present disclosure are also taught.