Photomask Layout Ring Pattern for Dome-Shaped Micro-Lens

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Solution Overview

Problem

The existing micro-lens formation process in CMOS image sensors is sensitive to heating conditions, leading to inconsistent micro-lens profiles due to the reliance on square patterns in photomasks.

Innovation Solution

A photomask layout is created by adding a substantially ring-shaped pattern and assist patterns, such as arc-shaped patterns, during the optical proximity correction step, which helps in defining dome-shaped micro-lenses less sensitive to heating conditions by compensating for image errors and constructive interference effects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If square patterns are used in photomasks for micro-lens formation, then the manufacturing process is simple, but the micro-lens profiles become sensitive to heating conditions and inconsistent

Engineering Contradiction:
Improvephotomask pattern simplicityVSAvoidmicro-lens profile consistency
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies optical proximity correction (OPC) during the photomask design stage to pre-compensate for heating-induced profile changes. By adding assist patterns and adjusting pattern geometries before fabrication, the method anticipates and counteracts the distorting effects of subsequent heating steps, ensuring consistent dome-shaped micro-lens profiles without requiring complex post-processing adjustments.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent modifies the photomask pattern parameters by transitioning from simple square patterns to complex patterns with assist features (such as cross-shaped or star-shaped assist patterns). These parameter changes in pattern geometry and complexity enable better control over the heating process outcomes, transforming the micro-lens formation from a heating-sensitive process to a more controllable one with consistent profiles.

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If simple square patterns are used in photomasks, then the pattern formation is straightforward, but the micro-lens shapes become highly sensitive to heating conditions

Engineering Contradiction:
Improvephotomask pattern complexityVSAvoidmicro-lens shape stability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent applies optical proximity correction (OPC) during the photomask design stage to pre-compensate for heating-induced profile changes. By adding assist patterns and adjusting pattern geometries before fabrication, the method anticipates and counteracts the distorting effects of subsequent heating steps, ensuring consistent dome-shaped micro-lens profiles without requiring complex post-processing adjustments.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent modifies the photomask pattern parameters by transitioning from simple square patterns to complex patterns with assist features (such as cross-shaped or star-shaped assist patterns). These parameter changes in pattern geometry and complexity enable better control over the heating process outcomes, transforming the micro-lens formation from a heating-sensitive process to a more controllable one with consistent profiles.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If ring-shaped patterns are added to compensate for heating effects, then micro-lens profile consistency improves, but the photomask layout complexity increases

Engineering Contradiction:
Improvemicro-lens profile consistencyVSAvoidphotomask layout complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies optical proximity correction (OPC) during the photomask design stage to pre-compensate for heating-induced profile changes. By adding assist patterns and adjusting pattern geometries before fabrication, the method anticipates and counteracts the distorting effects of subsequent heating steps, ensuring consistent dome-shaped micro-lens profiles without requiring complex post-processing adjustments.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent modifies the photomask pattern parameters by transitioning from simple square patterns to complex patterns with assist features (such as cross-shaped or star-shaped assist patterns). These parameter changes in pattern geometry and complexity enable better control over the heating process outcomes, transforming the micro-lens formation from a heating-sensitive process to a more controllable one with consistent profiles.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method results in micro-lens patterns with improved profiles, reducing sensitivity to heating conditions and enhancing the overall performance of CMOS image sensors.

Implementation Method 1

The correction step includes performing an optical proximity correction (OPC). The OPC is a model-based OPC or rule-based OPC. The OPC is executed manually.

Methodology Applied
Scientific EffectOptical proximity correction: Interference

Data Source

PatentUS9147033B2Method of making photomask layout and method of forming photomask including the photomask layout
Publication Date: 2015.09.29 UNITED MICROELECTRONICS CORP
  • US9147033B2 patent drawing
  • US9147033B2 patent drawing
  • US9147033B2 patent drawing

AI summary

A method of making a photomask layout is provided. A graphic data of a photomask is provided. The graphic data includes at least one rectangular pattern. A correction step is performed to the graphic data by using a computer. The correction step includes adding a substantially ring-shaped pattern inside the rectangular pattern. A method of forming a photomask by using the photomask layout obtained by the said method is also provided. In an embodiment, the photomask is suitable for defining micro-lenses of a solid-state image sensor.