Photomask Transcribing Pattern for Fine Photoresist Resolution

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Solution Overview

Problem

Proximate type exposure apparatuses struggle to form photoresist patterns with widths smaller than 7 μm due to critical dimension bias, requiring more expensive and time-consuming projection type exposure systems for finer resolutions.

Innovation Solution

A photomask with a transcribing pattern featuring discontinuous regions and light controlling regions that utilize diffraction to form continuous photoresist bars, allowing for the creation of fine photoresist patterns surpassing the resolution limit of proximate type exposure apparatuses.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a proximate type exposure apparatus is used to form photoresist patterns, then production cost is reduced and exposure speed is improved, but manufacturing precision deteriorates due to critical dimension bias preventing formation of patterns smaller than 7 μm

Engineering Contradiction:

Improvephotoresist pattern widthVSAvoidproduction cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The transcribing pattern is divided into multiple discontinuous regions instead of continuous bars. Each discontinuous region consists of multiple sub-regions separated by light controlling regions, allowing light diffraction to occur. This segmentation enables the formation of continuous photoresist patterns with widths below the conventional resolution limit of proximate type exposure apparatuses while maintaining cost-effectiveness

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention changes the structural parameters of the transcribing pattern by introducing discontinuous regions with specific configurations. The pattern includes multiple sub-regions within each discontinuous region, with controlled spacing and light controlling regions between them. This parameter modification allows the proximate type exposure apparatus to achieve finer resolution patterns that would otherwise require projection type systems

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If a projection type exposure apparatus is used to form fine photoresist patterns, then manufacturing precision is improved, but production cost increases and exposure speed decreases

Engineering Contradiction:

Improvephotoresist pattern widthVSAvoidexposure speed

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

By segmenting the transcribing pattern into discontinuous regions with light controlling regions between them, the invention enables proximate type exposure apparatus to achieve fine pattern formation without requiring the complex optical systems of projection type apparatus, thereby maintaining high exposure speed while improving manufacturing precision

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention replaces the need for complex projection optical systems with a specially designed transcribing pattern that utilizes light diffraction phenomena. This substitution allows proximate type exposure apparatus to achieve fine resolution without the mechanical complexity and speed limitations of projection type systems

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the formation of continuous photoresist patterns with widths beyond the resolution limit of proximate type exposure apparatuses, improving production yield and reducing costs by using a low-cost, high-speed process similar to that of proximate type systems.

Implementation Method 1

a plurality of light controlling regions between the two adjacent discontinuous regions, the plurality of light controlling regions controlling an amount of light passing through the photomask

Methodology Applied

Scientific EffectDiffraction: Diffraction

Data Source

PatentUS8551674B2Photomask having transcribing pattern and method of forming photoresist pattern using the same

Publication Date: 2013.10.08 SAMSUNG DISPLAY CO LTD

AI summary

A photomask for a proximate type exposure apparatus includes: a transparent substrate; and a transcribing pattern and a peripheral region surrounding the transcribing pattern on the transparent substrate, the transcribing pattern having at least one bar including a plurality of discontinuous regions and a plurality of light controlling regions between the two adjacent discontinuous regions, the plurality of discontinuous regions capable of forming at least one continuous photoresist bar by exposing and developing a photoresist material.