Single Photon Counting Pixel Detector Chip With Negligible Dead Time
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Solution Overview
Problem
Current single photon counting pixel detectors face limitations in pixel size, frame rate, and crosstalk issues, which restrict image resolution, functionality, and the ability to perform simultaneous measurements at high frame rates.
Innovation Solution
A single photon counting pixel detector chip with a layer of photosensitive material, N×M array of photo-detector diodes, and N×M array of readout unit cells featuring high-gain charge amplification, split pixel counters, and parallel data transfer, along with capacitors for temporary storage and separate substrate zones to minimize crosstalk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the pixel size is reduced to increase image resolution, then the image resolution is improved, but the number of transistors that can be placed on the pixel is limited
Solution Approach 1:
The patent implements a multi-layer transistor architecture where transistors are stacked vertically across multiple layers (first layer, second layer, third layer) rather than being confined to a single planar layer. This vertical stacking enables significantly more transistors to be integrated within the same pixel footprint, thereby maintaining image resolution while increasing functional complexity.
Solution Approach 2:
The patent employs nested transistor structures where transistors in upper layers are positioned directly above or adjacent to transistors in lower layers, creating a three-dimensional integrated structure. This nesting approach maximizes the use of available space within each pixel, allowing complex functionality to be achieved without increasing pixel area.
2Productivity
If the readout time is reduced to increase frame rate, then the frame rate is improved, but the readout time (dead time) becomes significant and limits the frame rate
Solution Approach 1:
The patent implements a dual-buffer architecture where pixel data is pre-loaded into a first buffer during one readout cycle while simultaneously being read out from a second buffer. This overlapping of data loading and readout operations eliminates idle time between frames, effectively reducing the dead time and enabling higher frame rates.
Solution Approach 2:
The patent maintains continuous data flow through the pipeline by implementing overlapping readout and load operations. While data is being read out from one buffer, the next frame's data is being loaded into the other buffer, ensuring that the readout circuitry is never idle and the useful action continues without interruption across multiple frames.
3Adaptability or versatility
If a single internal counter is used to accumulate counts, then the counting functionality is simple, but simultaneous measurements (pumped and un-pumped) cannot be performed
Solution Approach 1:
The patent divides the counting functionality into multiple independent pixel counters, each capable of independently accumulating photon counts. This segmentation allows different pixel groups to perform different measurement functions simultaneously (e.g., one group for pumped measurements, another for un-pumped measurements), thereby enabling multi-modal experiments without increasing the complexity of individual counter structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high frame rates with negligible dead time, flexible bit depths, and reduced crosstalk, allowing for simultaneous measurements and improved image resolution without increasing pixel size.
Implementation Method 1
A photon impinging a sensor pixel generates electron-hole pairs. These electron-hole pairs are separated by an electric field generating a charge pulse.
Data Source
AI summary
A single photon counting pixel detector chip has a negligible dead time and consequentially high frame rates. The detector chip contains: a) a layer of photosensitive material; b) an N×M array of photo-detector diodes arranged in the layer of photosensitive material; and c) a N×M array of readout unit cells. The readout unit cell contains an input interface connected to a diode output interface, a high-gain charge to voltage amplifying device and a pixel counter being connected to an output of the high-gain voltage amplifying device. The pixel counter is split into a first number of nibble counters. The basic counter cell contains a counting element, a switch, a temporary storage element and an output stage. Additionally, the detector chip has a side shift register to read out the nibble counters row-wise with a predetermined number of nibble row selections.


