Photon-Effect Transistor Nanowire Pixel Architecture
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current image sensor pixel architecture is complex and prone to noise, leading to low resolution and sensitivity due to the need for multi-component integration and dual processes of signal conversion and amplification, which limits miniaturization and efficiency.
Innovation Solution
A photon-effect transistor (PET) with a two-terminal structure that integrates light signal sensing and electrical signal amplification into a single unit, using a photon-gate made of photonic materials like zinc oxide or silicon, allowing current flow control by light signals and fabricated using thin-film techniques, enabling a simplified and efficient image sensing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional multi-component pixel architecture is used, then signal conversion and amplification functions are achieved, but device complexity increases and noise is induced
Solution Approach 1:
The patent combines the photodetector and FET into a single integrated device where the photonic material channel serves both as the light-sensing element and the transistor channel. This merging eliminates the need for separate photodetector and amplifier components, reducing device complexity while maintaining signal conversion and amplification functions.
Solution Approach 2:
The photonic material channel in the PET performs multiple functions simultaneously: it acts as the light-absorbing photodetector element, the transistor channel for current modulation, and the amplification medium. This multi-functionality reduces the number of components needed in the pixel architecture.
2Productivity
If traditional FET architecture is minimized, then integration density increases, but unit size limitation is approached
Solution Approach 1:
The patent transitions from planar 2D channel structures to vertically-aligned 1D nanowire channels, utilizing the vertical dimension for light absorption and current flow. This dimensional change allows for extremely compact lateral footprints while maintaining functional channel lengths, enabling pixel sizes of approximately 50 nm or less.
3Reliability
If multiple discrete components are integrated in one pixel, then sensing functions are achieved, but noise is induced during signal conversion and amplification
Solution Approach 1:
By merging the photodetector and FET into a single device with a shared photonic material channel, the patent eliminates the interfaces and signal transfer steps between separate components that generate noise. The direct coupling of light absorption and current amplification in one continuous channel reduces noise during signal conversion and amplification.
4Productivity
If pixel size is reduced for miniaturization, then more units can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes the channel geometry from planar 2D to vertically-aligned 1D nanowire structure, which allows the lateral pixel dimensions to be reduced to approximately 50 nm while the functional channel length is determined by the vertical nanowire length. This parameter separation enables miniaturization without proportionally increasing manufacturing precision requirements for the channel-forming process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The PET achieves stronger sensitivity and higher efficiency with reduced complexity and signal distortion, enabling miniaturization to pixel sizes of approximately 50 nm or less, significantly improving image resolution and sensitivity compared to traditional CMOS structures.
Implementation Method 1
The photonic material can be, for example, zinc oxide (ZnO), silicon (Si), or any other semiconducting materials that exhibit the photo effect
Data Source
AI summary
A two-terminal photon-effect transistor (PET) is described that simplifies the photo sensing pixel by combing photodiode and field effect transistor dual functions into one simple but effective unit. Photons excite electrons from the valance band of semiconducting material as the electrode-free gate to modulate resistivity between source and drain, which directly results in current amplification of photo signal without traditional photo-electrical conversion and electrical amplification dual processes. PET possesses significance in both structural simplification and functional enhancement. As an implementing example of PET, a nanowire camera (NC) with large sensing area and extremely high resolution is fabricated by integrating millions of vertically aligned nanowire arrays in-between of orthogonal top and bottom nano-stripe electrodes. Each nanowire works as independent three-dimensional (3D) PET pixel, enabling the NC an ultra-high resolution and much simplified architecture. NC has pixel size of 50 nm which is two orders higher than existing CCD and CMOS image sensors.