Photonic Crystal Laser Electrode Layout for Stable Electrical Driving
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing photonic crystal lasers face difficulties in electrical driving due to structural limitations, particularly the challenge of integrating metal electrodes with microstructures having large refractive index differences, which impede efficient laser oscillation and commercial application.
Innovation Solution
A photonic crystal semiconductor laser device is designed with an n-type clad layer, a guide layer, a p-type clad layer, a p-type contact layer, and electrode layers, where holes form a photonic crystal pattern, allowing for electrical driving by optimizing the refractive index distribution and electrode placement to minimize optical field interaction with metal layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If micro structures with large refractive index difference are formed to create photonic crystal pattern, then photonic crystal laser function is achieved, but metal electrode integration becomes very difficult
Solution Approach 1:
The device is segmented into distinct functional regions: a photonic crystal region with holes for optical confinement and electrode regions without holes for electrical contact. This segmentation allows the photonic crystal pattern to be formed only where needed for optical function, while leaving areas open for metal electrode integration.
Solution Approach 2:
Different regions of the semiconductor layer have different properties: regions with holes provide photonic crystal optical confinement, while hole-free regions provide good electrical contact properties. This local differentiation resolves the conflict between optical function and electrode integration by giving each region its specialized quality.
2Ease of operation
If metal electrodes are integrated with photonic crystal micro structures, then electrical driving is enabled, but laser oscillation characteristics deteriorate
Solution Approach 1:
The electrode structure is segmented to contact only the semiconductor layer without interfering with the photonic crystal hole pattern. Metal electrodes are placed in hole-free regions, separating the electrical contact function from the optical confinement function, thereby enabling electrical driving while preserving laser oscillation characteristics.
Solution Approach 2:
The semiconductor layer acts as an intermediary between the metal electrodes and the active layer. Electrons are injected through the semiconductor layer in regions without holes, avoiding direct metal-optical field interaction while still enabling electrical driving. This intermediary approach protects the optical field from harmful metal interactions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables stable electrical driving and reduces device size for single-mode oscillation, facilitating industrial applications of photonic crystal lasers by overcoming structural limitations and improving laser oscillation characteristics.
Implementation Method 1
a photonic crystal refers to a structure in which two materials having different refractive index are periodically arranged on a scale of approximate optical wavelengths
Implementation Method 2
two materials having different refractive index are periodically arranged
Implementation Method 3
a guide layer formed on the n-type clad layer and including an active layer
Data Source
AI summary
An embodiment of the present invention provides a photonic crystal semiconductor laser device including an n-type clad layer formed on a first surface of an n-type first substrate, a guide layer formed on the n-type clad layer and including an active layer, a p-type clad layer formed on the guide layer, a p-type contact layer formed on the p-type clad layer, a p-type electrode layer formed on the p-type contact layer, and an n-type electrode layer contacting at least a portion of the first surface of the n-type first substrate or a second surface opposing the first surface, wherein holes penetrating the p-type contact layer, the p-type clad layer, the guide layer including the active layer, and the n-type clad layer are formed in the p-type contact layer, the p-type clad layer, the guide layer including the active layer, and the n-type clad layer, and the holes form a photonic crystal pattern.