Photonic Crystal Semiconductor Laser for Single-Mode Light Extraction
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Solution Overview
Problem
Semiconductor lasers utilizing photonic crystals are in the early stages of development and require improvements in design and manufacturing methods to enhance their performance.
Innovation Solution
A semiconductor laser design that includes a first semiconductor layer part, an active layer, a second semiconductor layer part, a third semiconductor layer part with a photonic crystal, and a fourth semiconductor layer part, where the third and fourth layers are directly bonded, with specific impurity concentrations and structures to optimize light emission and reduce higher order modes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a photonic crystal is introduced into a semiconductor laser, then light extraction efficiency is improved and higher order modes are reduced, but device complexity increases
Solution Approach 1:
The semiconductor laser is divided into multiple semiconductor layer parts (first, second, third, and fourth layer parts) with different conductivity types and impurity concentrations. The photonic crystal is specifically integrated into one of these layer parts, allowing the complex photonic crystal function to be segmented into a specific region rather than requiring the entire device to be redesigned, thus improving light extraction efficiency while managing overall device complexity.
Solution Approach 2:
Different semiconductor layer parts are designed with different local properties: the third semiconductor layer part contains a photonic crystal with specific impurity concentrations for optimal light extraction, while other layer parts have different conductivity types and impurity concentrations optimized for their specific functions (current injection, light generation, charge blocking). This local optimization allows the photonic crystal to improve light extraction efficiency without requiring uniform complexity throughout the entire device.
2Reliability
If multiple semiconductor layer parts with different impurity concentrations are used, then single mode operation is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The device is segmented into multiple semiconductor layer parts, each with a specific impurity concentration range. This segmentation allows the overall mode stability requirement to be distributed across multiple layers rather than requiring extreme precision in a single layer. Each layer contributes to the overall single mode operation through its specific impurity concentration, making the manufacturing process more manageable.
Solution Approach 2:
Different impurity concentrations are used in different semiconductor layer parts to achieve single mode operation. By varying the impurity concentration parameter across different layers (first conductivity type in third layer part, second conductivity type in second layer part, different impurity concentrations in fourth layer part), the laser achieves stable single mode operation while allowing for broader manufacturing tolerances compared to requiring uniform high precision throughout.
3Ease of manufacture
If direct bonding is used between third and fourth semiconductor layer parts, then device integration is improved, but bonding reliability may be compromised
Solution Approach 1:
The semiconductor laser is constructed by directly bonding the third semiconductor layer part to the fourth semiconductor layer part, creating integrated structures with different conductivity types and impurity concentrations. This direct bonding approach improves device integration by eliminating intermediate layers and simplifying the manufacturing process, while the specific material composition and interface design of these segmented layers are optimized to maintain bonding reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves efficient light emission with reduced higher order modes, enabling single mode operation and improved light extraction efficiency, thereby enhancing the performance of semiconductor lasers.
Implementation Method 1
at least either the third semiconductor layer part or the fourth semiconductor layer part including a photonic crystal
Data Source
AI summary
A semiconductor laser includes: a first semiconductor layer part including a semiconductor layer of a first conductivity type; an active layer disposed on the first semiconductor layer part; a second semiconductor layer part disposed on the active layer and including a semiconductor layer of a second conductivity type; a third semiconductor layer p100415-0433art disposed on the second semiconductor layer part and including a semiconductor layer containing a first concentration of an impurity of the first conductivity type; and a fourth semiconductor layer part disposed on the third semiconductor layer part and including a semiconductor layer containing a second concentration of the impurity of the first conductivity type, the second concentration being lower than the first concentration. The third semiconductor layer part is directly bonded to the fourth semiconductor layer part. At least one of the third semiconductor layer part or the fourth semiconductor layer part includes a photonic crystal.