2D Photonic Crystal Laser Using Solid-State Epitaxial Growth
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Solution Overview
Problem
Existing methods for producing two-dimensional photonic crystal lasers face issues such as increased electric resistance at interfaces, deformation of air holes during epitaxial growth, and imperfections in the periodic structure due to atomic migrations and void formation, which degrade the performance of the laser.
Innovation Solution
The use of AlαGa1-αAs or (AlβGa1-β)γIn1-γP materials for the two-dimensional photonic crystal layer, which remain solid at high temperatures, and the epitaxial growth of AlxGa1-xAs as the upper layer to minimize deformation and voids, along with specific air hole designs and growth inhibiting films to maintain the structural integrity and performance of the photonic crystal layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If thermal fusion bonding is used to join the upper layer to the two-dimensional photonic crystal layer, then the layers can be fused together, but the electric resistance at the interface increases and air holes may deform
Solution Approach 1:
The patent changes the bonding method from thermal fusion bonding to epitaxial growth, fundamentally altering the joining parameters. Epitaxial growth allows for low-temperature, in-situ formation of the upper layer that maintains crystal structure continuity and prevents air hole deformation while achieving strong bonding through atomic-level adhesion
Solution Approach 2:
The patent replaces the mechanical/thermal bonding process (thermal fusion) with a chemical/epitaxial growth process. This substitution eliminates the need for high-temperature heating that causes air hole deformation and interface resistance, while achieving superior bonding quality through controlled epitaxial formation of the upper layer
2Strength
If the upper layer is epitaxially grown on the two-dimensional photonic crystal layer, then the layers can be integrated, but atomic migrations may occur at high temperatures causing deformation and void formation
Solution Approach 1:
The patent optimizes the epitaxial growth parameters, specifically controlling the growth temperature and atmosphere to prevent atomic migrations. By conducting epitaxial growth at controlled temperatures with appropriate gas flow, the process achieves layer integration while maintaining air hole shape precision and preventing void formation
Solution Approach 2:
The patent introduces a buffer layer or interface control mechanism during epitaxial growth that mediates between the substrate and the upper layer. This intermediary structure prevents direct atomic migration into the air holes while enabling proper epitaxial growth and maintaining structural precision
3Ease of manufacture
If material is epitaxially grown to form the upper layer, then the layer can be created, but material may intrude into air holes causing structural imperfections
Solution Approach 1:
The patent applies local quality control by modifying the air hole structure or adding protective features at specific locations where material intrusion is most likely to occur. This may include varying air hole dimensions, adding protective coatings, or creating growth-inhibiting structures at the air hole openings to prevent material intrusion while allowing epitaxial growth elsewhere
Solution Approach 2:
The patent implements preliminary anti-action by pre-treating the air holes or substrate surface before epitaxial growth to prevent material intrusion. This may involve forming protective barriers, modifying surface energy characteristics, or pre-structuring the air holes to resist material encroachment during the subsequent epitaxial growth process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a robust two-dimensional photonic crystal laser with improved high-temperature stability, reduced voids, and enhanced laser characteristics by preventing material intrusion into air holes and ensuring precise epitaxial growth, thus maintaining high performance as a resonator.
Implementation Method 1
This periodic structure causes a Bragg diffraction within the crystal and creates an energy band gap for the energy of light.
Implementation Method 2
an epitaxial growth layer created on the two-dimensional photonic crystal layer by an epitaxial method
Data Source
AI summary
A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of AlαGa1-αAs (0<α<1) or (AlβGa1-β)γIn1-γP (0<=β<1, 0<γ<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since AlαGa1-αAs and (AlβGa1-β)γIn1-γP are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16, so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels.