Photonic Crystal Light Modulator for 1 ns Shutter Speed

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Solution Overview

Problem

Current 3D cameras and LADAR technology require a high-speed optical image shutter with a shutter time of 1 ns for distance measurement, but existing semiconductor-based optical shutters are expensive and difficult to manufacture due to complex structures and high voltage requirements.

Innovation Solution

A photonic crystal type light modulator with a substrate, electrodes, and a 2D grating photonic crystal layer that changes light transmission or reflection based on an electric field, using materials like KTN, LiNbO3, or MQW structures, allowing for rapid modulation of specific wavelength bands.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If semiconductor-based optical shutter is used, then shutter time is reduced to 1 ns, but manufacturing complexity and cost increase significantly

Engineering Contradiction:
Improveshutter timeVSAvoidmanufacturing complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent replaces complex semiconductor-based optical shutters with a photonic crystal light modulator that uses photonic band gap effects and refractive index modulation. This substitution eliminates the need for complex semiconductor manufacturing processes while achieving the required 1 ns shutter speed through optical field control in the photonic crystal structure.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent utilizes changes in the refractive index of the active layer material in response to applied electric fields to modulate light transmission. By dynamically changing the refractive index parameter, the system achieves rapid switching between light transmission and blocking states without requiring complex mechanical or semiconductor structures.

Inventive Principle:
Principle #35Parameter changes

2Speed

If semiconductor-based optical shutter is used, then shutter time is reduced to 1 ns, but manufacturing difficulty increases due to complex structure

Engineering Contradiction:
Improveshutter timeVSAvoidmanufacturing ease
Core Design Contradiction:
SpeedVSEase of manufacture

Solution Approach 1:

The patent replaces complex semiconductor-based optical shutters with a photonic crystal light modulator that uses photonic band gap effects and refractive index modulation. This substitution eliminates the need for complex semiconductor manufacturing processes while achieving the required 1 ns shutter speed through optical field control in the photonic crystal structure.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent employs a photonic crystal structure with an active layer that can be manufactured using standard semiconductor fabrication processes, avoiding the need for expensive and complex vacuum packaging and high voltage systems required by image intensifiers and semiconductor-based optical shutters.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Speed

If image intensifier is used, then shutter time is reduced to 1 ns, but cost and voltage requirements increase

Engineering Contradiction:
Improveshutter timeVSAvoidvoltage requirement
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent utilizes changes in the refractive index of the active layer material in response to applied electric fields to modulate light transmission. By dynamically changing the refractive index parameter, the system achieves rapid switching between light transmission and blocking states without requiring complex mechanical or semiconductor structures.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The photonic crystal light modulator enables rapid and efficient modulation of light, achieving the necessary high-speed shutter operation without the cost and manufacturing complexities of existing semiconductor-based solutions, suitable for 3D image acquisition and depth sensing applications.

Implementation Method 1

an optical characteristic of the active layer changes according to application of an electric field

Methodology Applied
Scientific EffectElectro-optic effect: Electro-Optic Effects

Implementation Method 2

an optical characteristic of the active layer changes according to application of an electric field

Methodology Applied
Scientific EffectPockels effect: Pockels Effect

Implementation Method 3

a photonic crystal layer disposed on the second electrode and comprising a 2D grating

Methodology Applied
Scientific EffectPhotonic crystal effect: Photonic Crystal

Implementation Method 4

A wavelength band of light incident on the photonic crystal type light modulator may be reflected or transmitted according to the application of the electric field, a size, a form, and a material of the unit blocks

Methodology Applied
Scientific EffectBragg reflection: Bragg Diffraction

Data Source

PatentUS9638941B2Photonic crystal type light modulator and 3D image acquisition apparatus employing the same
Publication Date: 2017.05.02 SAMSUNG ELECTRONICS CO LTD
  • US9638941B2 patent drawing
  • US9638941B2 patent drawing
  • US9638941B2 patent drawing

AI summary

A photonic crystal type light modulator is provided. The photonic crystal type light modulator includes: a substrate; a first electrode disposed on the substrate; an active layer disposed on the first electrode, where an optical characteristic of the active layer changes according to application of an electric field; a second electrode disposed on the active layer; and a photonic crystal layer disposed on the second electrode and comprising a 2D grating.