3D Photonic-Electrical Package Without TSVs or Wire Bonds
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Solution Overview
Problem
Existing semiconductor technologies face challenges in efficiently integrating optical and electrical devices due to high interference and the need for costly through silicon vias (TSVs) and wire-bond connections, which hinder high-frequency signal transmission and occupy valuable space.
Innovation Solution
A 3D package integration of photonic and electrical devices using an index matching material on the backside of optical devices for optical input/output, coupled with a metal reflector to enhance light coupling efficiency, eliminating the need for TSVs and wire-bonds, and allowing direct high-frequency signal transmission between devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through silicon vias (TSVs) and wire-bond connections are used to integrate optical and electrical devices, then electrical connectivity is achieved, but parasitic interference increases and high-frequency signal transmission is hindered
Solution Approach 1:
The patent extracts and eliminates the harmful TSV and wire-bond connection structures from the integration system. By removing these traditional interconnect methods, the source of parasitic interference is eliminated, allowing direct optical-to-electrical signal transmission without the degradation caused by conventional electrical interconnections.
Solution Approach 2:
The patent replaces the mechanical electrical connection system (TSVs and wire bonds) with an optical transmission system. Light serves as the transmission medium between optical and electrical devices, substituting the mechanical electrical interconnect structure with an optical field-based transmission mechanism that avoids parasitic effects.
2Adaptability or versatility
If through silicon vias (TSV) are used for device integration, then electrical connectivity is achieved, but valuable space is occupied and fabrication cost increases
Solution Approach 1:
The patent extracts and removes the TSV structure from the integration architecture. By eliminating TSVs, the valuable silicon real estate previously occupied by these through-silicon vias is freed up, allowing for higher device density and more efficient space utilization in the integrated package.
Solution Approach 2:
The patent introduces an optical field as an intermediary medium for signal transmission between devices. This optical mediator eliminates the need for physical TSV structures, enabling device integration without the space-consuming interconnect infrastructure that TSVs require.
3Adaptability or versatility
If conventional integration methods are used, then device connectivity is achieved, but fabrication cost increases
Solution Approach 1:
The patent extracts and eliminates the costly TSV fabrication process from the manufacturing workflow. By removing this complex and expensive fabrication step, the overall manufacturing cost is reduced while maintaining device connectivity through the alternative optical transmission approach.
4Reliability
If wire-bond connections are used for signal transmission, then electrical connectivity is achieved, but high-frequency signal transmission is hindered
Solution Approach 1:
The patent replaces the mechanical wire-bond transmission system with an optical transmission system. By substituting electrical wire-bond connections with optical fields, the system achieves high-frequency signal transmission capability that is not limited by the parasitic effects and bandwidth constraints of traditional wire-bond electrical interconnections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances light coupling efficiency, reduces parasitic interference, and enables high-frequency signal transmission up to 250 Gbps per channel, freeing up space for additional electrical components while minimizing fabrication costs.
Implementation Method 1
an index matching material on the backside of optical devices for optical input/output
Implementation Method 2
coupled with a metal reflector to enhance light coupling efficiency
Data Source
AI summary
A semiconductor package includes a photonic die having a first side and a second side opposite to each other. The semiconductor package includes an electrical die having a third side and a fourth side opposite to each other. The first side of the photonic die faces the third side of the electrical die. The photonic die has an index matching material extending from a surface of the photonic die on the second side into the photonic die.