Photonic Interposer Bonding for Fast, Low-Power Chip Packages
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Solution Overview
Problem
Current semiconductor packages face challenges in achieving fast signal and data transmission rates while minimizing power consumption, particularly in integrating optical and electrical components effectively.
Innovation Solution
The integration of silicon nitride waveguides in interposers for optical communication between photonic and electronic components, combined with metal-to-metal and dielectric-to-dielectric bonding, enables faster data transmission with reduced power consumption and smaller package size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If optical signaling is used for signal transmission, then transmission speed is improved, but device complexity increases due to integration of optical and electrical components
Solution Approach 1:
The patent combines optical signaling components (waveguides, photodetectors, lasers) with electrical signaling components (ASICs, memory dies, interposers) into a single integrated package. This merging allows the system to achieve high transmission speeds through optical channels while maintaining the processing and control capabilities of electrical components, resolving the contradiction between speed improvement and device complexity by integrating both types of components into a unified structure.
Solution Approach 2:
The patent introduces interposers as intermediary structures that facilitate the integration between optical and electrical components. The interposers provide mechanical support, electrical interconnections, and optical routing, acting as mediators that enable the complex integration of photonic and electronic dies while managing the overall system complexity through modular architecture.
2Adaptability or versatility
If optical and electrical components are integrated in the same package, then functionality is improved, but package size increases
Solution Approach 1:
The patent employs three-dimensional stacking architecture where photonic dies, electronic dies, and interposers are arranged in multiple layers vertically. This dimensional transition from planar to volumetric arrangement allows optical and electrical components to be integrated in the same package without proportionally increasing the lateral footprint, thereby maintaining enhanced functionality while controlling overall package size through vertical space utilization.
3Strength
If metal-to-metal bonding is used for component integration, then connection strength is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent incorporates preliminary alignment features and pre-formed bonding structures during the manufacturing process. These preliminary actions include creating alignment marks, pre-shaping bonding surfaces, and establishing reference structures before the actual bonding operation, which reduces the precision requirements during the final bonding step while ensuring strong metal-to-metal connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances signal and data transmission rates between integrated circuit devices and memory devices, reducing power consumption and allowing for a more compact semiconductor package design.
Implementation Method 1
the first optical components comprising a silicon nitride waveguide
Implementation Method 2
bonded to a first interposer using both metal-to-metal bonding and dielectric-to-dielectric bonding
Implementation Method 3
bonded to a first interposer using both metal-to-metal bonding and dielectric-to-dielectric bonding
Data Source
AI summary
A semiconductor package including a first interposer comprising a first substrate, first optical components over the first substrate, a first dielectric layer over the first optical components, and first conductive connectors embedded in the first dielectric layer, a photonic package bonded to a first side of the first interposer, where a first bond between the first interposer and the photonic package includes a dielectric-to-dielectric bond between a second dielectric layer on the photonic package and the first dielectric layer, and a second bond between the first interposer and the photonic package includes a metal-to-metal bond between a second conductive connector on the photonic package and a first one of the first conductive connectors and a first die bonded to the first side of the first interposer.