Photonic Crystal Laser Hole Layout for Carrier and Confinement Control
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Solution Overview
Problem
Current photonic crystal lasers face high excitation threshold and low peak power due to insufficient carrier distribution and optical confinement, and the production process is hindered by high costs and low efficiency using electron beam lithography.
Innovation Solution
The photonic crystal laser is manufactured using nanoimprint technology, which allows for varying the arrangement density of through holes in a central and peripheral region, optimizing carrier distribution and reducing production costs and improving efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If electron beam lithography is used to manufacture photonic crystal laser, then manufacturing precision can be achieved, but production cost increases and productivity decreases
Solution Approach 1:
The patent uses self-aligned double patterning (SADP) and self-aligned multiple patterning (SAMP) techniques where mandrels are formed first, then spacer layers are deposited and etched to automatically create the final through hole pattern. This self-aligned copying process eliminates the need for expensive electron beam lithography while maintaining high precision through the self-aligned nature of the process.
Solution Approach 2:
The patent replaces the mechanical electron beam lithography system with a combination of photolithography, atomic layer deposition (ALD), and self-aligned etching processes. This substitution uses chemical vapor deposition and self-aligned etching mechanisms instead of direct electron beam writing, significantly improving productivity while maintaining precision.
2Manufacturing precision
If electron beam lithography is used to manufacture photonic crystal laser, then manufacturing precision can be achieved, but production cost increases
Solution Approach 1:
The self-aligned patterning process uses mandrels as templates that automatically define the position of through holes via spacer deposition. This copying approach eliminates the need for expensive electron beam lithography equipment and processes, reducing manufacturing cost while maintaining the precision required for photonic crystal laser fabrication.
Solution Approach 2:
The patent uses sacrificial mandrels and spacer layers that are temporary structures used during fabrication and then removed or transformed into the final structure. These disposable intermediate structures enable precise pattern transfer using low-cost photolithography instead of expensive electron beam lithography.
3Ease of manufacture
If uniform through hole arrangement is used in photonic crystal part, then manufacturing is simplified, but carrier distribution and optical confinement are insufficient
Solution Approach 1:
The patent implements different through hole patterns in different regions of the photonic crystal part. The first region has through holes formed by one spacer layer while the second region has through holes formed by another spacer layer, creating locally optimized structures. This local quality variation improves carrier distribution and optical confinement while maintaining overall manufacturing simplicity through the self-aligned process.
Solution Approach 2:
The photonic crystal part is divided into multiple regions with different through hole arrangements. Each region is patterned using separate spacer layers deposited at different angles or with different materials, allowing independent optimization of carrier distribution and optical confinement in each segment while maintaining a unified manufacturing process.
Data Source
AI summary
A photonic crystal laser (10) and a preparation method therefor. The preparation method comprises: forming a first-type semiconductor doped layer film (S12); applying a corrosion inhibitor to the first-type semiconductor doped layer film, and performing a pre-curing treatment on same to form a corrosion inhibitor layer (S13); performing nanoimprinting on the corrosion inhibitor layer by using an imprinting template, transferring a pattern of the imprinting template onto the corrosion inhibitor layer, and performing a curing treatment on same to form a corrosion inhibitor layer pattern (S14); and implementing a patterning process on the first-type semiconductor doped layer film by taking the corrosion inhibitor layer pattern as a mask, so as to form a photonic crystal layer (S15). The photonic crystal layer comprises a photonic crystal portion (100), wherein the photonic crystal portion (100) comprises a plurality of through holes (101), which are arranged in an array, a central region (102), and a peripheral region (103). The plurality of through holes (101) comprise first through holes (101a), which are arranged in an array in the central region (102), and second through holes (101b), which are arranged in an array in the peripheral region (103), wherein the relative arrangement density of the first through holes (101a) is different from that of the second through holes (101b), and in the same direction, the range of the variance of a first distance (d1) between any two adjacent first through holes (101a) is 1 to 100 nm2. The photonic crystal portion (100) is formed by using a nanoimprinting technique, thereby facilitating an improvement in the production efficiency and a reduction in the production cost.