Photonic Memory Device Ring Resonator High-Density Integration

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Solution Overview

Problem

Current photonic technologies can realize high-speed logic circuits and frequency filters but lack efficient memory devices, as direct integration of photonic circuits for memory units is hindered by spatial limitations, necessitating the use of conventional DRAM or SRAM.

Innovation Solution

A photonic memory device utilizing a ring resonator structure within cells arranged in rows and columns, allowing for high-density data storage and management similar to conventional DRAM, with photons stored and processed through optical fibers or waveguides, enabling efficient integration in a small surface area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If photonic circuits are directly integrated for memory units, then high-speed data processing and optical communication capabilities are improved, but spatial limitations prevent efficient memory device implementation

Engineering Contradiction:
Improvedata processing speedVSAvoidmemory device area
Core Design Contradiction:
SpeedVSArea of stationary object

Solution Approach 1:

The patent replaces conventional electronic memory mechanisms with photonic mechanisms. Specifically, it uses optical fields and photonic crystals to store and process data, substituting the traditional electronic circuit-based memory architecture with a photonic-based architecture that leverages light-matter interactions and optical resonance phenomena to achieve high-speed operation without the spatial constraints of electronic components

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental operating parameters of the memory device from electronic to photonic domains. By utilizing optical frequency, photon energy, and photonic bandgap properties instead of electron flow and electrical resistance, the system achieves higher operating speeds while reducing the physical footprint through compact photonic crystal structures that confine light in sub-wavelength dimensions

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If conventional DRAM or SRAM is used for photonic systems, then memory storage capability is achieved, but integration efficiency and surface area utilization are reduced

Engineering Contradiction:
Improvedata storage capacityVSAvoidintegration complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent creates a universal photonic memory platform that can perform multiple functions including data storage, data processing, and optical signal modulation within a single integrated device. The photonic crystal structure serves dual purposes as both the memory storage medium and the optical circuit interconnect, eliminating the need for separate electronic memory components and reducing overall system complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent divides the memory device into modular photonic crystal unit cells that can be replicated and arranged in arrays. Each unit cell functions as an independent memory element with standardized interfaces, allowing for scalable integration from small to large capacity devices while maintaining uniform manufacturing processes and simplifying system design through modular architecture

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the storage of 1 bit of data in a minimum surface area, facilitating high-density integration and potential widespread adoption in the semiconductor market, while also functioning as a sensitive photonic sensor device due to the resonance frequency's reaction to external stimuli.

Implementation Method 1

A photonic memory device utilizes a ring resonator structure within cells arranged in rows and columns, allowing for high-density data storage and management

Methodology Applied
Scientific EffectOptical resonance: Resonance

Implementation Method 2

functioning as a sensitive photonic sensor device due to the resonance frequency's reaction to external stimuli

Methodology Applied
Scientific EffectResonance frequency shift: Resonance

Data Source

PatentUS7903445B2Photonic memory device, data storing method using the photonic memory device and photonic sensor device
Publication Date: 2011.03.08 SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
  • US7903445B2 patent drawing
  • US7903445B2 patent drawing
  • US7903445B2 patent drawing

AI summary

Provided are a photonic memory device, a method of storing data using the photonic memory device, and a photonic sensor device. The photonic memory device comprises a signal line through which a photon is input; a ring resonator receiving a photon through an input gap that is adjacent to the signal line and storing the photon; and a detect line outputting the photon stored in the ring resonator through an output gap that is adjacent to the ring resonator, wherein data is read/written and stored/deleted by the input/output of the photon.