Photonic Modulator Semiconductor Contact Integration
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Solution Overview
Problem
Integrating photonic components with CMOS and BiCMOS circuitry on silicon substrates is challenging due to the need for different processing steps, which increases processing time and cost.
Innovation Solution
A semiconductor structure with a photonic modulator and a field effect transistor on the same substrate, using a semiconductor contact structure with the same material as the gate electrode, featuring lateral p-n junctions to minimize processing steps and integrate photonic components efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If photonic components are integrated with CMOS and BiCMOS circuitry on silicon substrates, then on-chip and chip-to-chip optical interconnects are enabled, but different processing steps need to be integrated which increases manufacturing complexity and processing time
Solution Approach 1:
The patent merges the formation of the semiconductor contact structure and gate electrode into a single deposited and patterned layer, eliminating the need for separate processing steps for these components while enabling integration of photonic modulators with CMOS circuitry
2Adaptability or versatility
If photonic components are integrated with CMOS and BiCMOS circuitry on silicon substrates, then on-chip and chip-to-chip optical interconnects are enabled, but the number of processing steps increases which increases processing time and cost
Solution Approach 1:
The patent combines multiple structure formation operations into unified processing steps: a single semiconductor material layer is deposited and patterned to form both the contact structure and gate electrode simultaneously, reducing overall processing time
Solution Approach 2:
The semiconductor material layer serves multiple functions: it forms the contact structure for electrical connection, the gate electrode for transistor control, and the modulator semiconductor structure for photonic modulation, eliminating the need for separate dedicated layers for each function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of processing steps and time required for manufacturing, enabling efficient integration of photonic components with CMOS and BiCMOS circuitry while maintaining high efficiency in light transmission and modulation.
Implementation Method 1
the light in the semiconductor waveguide may be absorbed, reflected, or induced to change the phase. One method of manipulate the signal in a waveguide is to add a photonic modulator.
Implementation Method 2
A dielectric material having a lower refractive constant surrounds the semiconductor waveguide so that a total reflection condition is satisfied at the interface between the semiconductor waveguide and the dielectric material for light impinging on the interface at a glancing angle.
Data Source
AI summary
A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure. A semiconductor material layer is deposited, patterned, and doped with patterns to form a gate electrode for the field effect transistor and the semiconductor contact structure for the waveguide.