Photoirradiation Release Agent Composition for Clean Wafer Separation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing release agent layers used in semiconductor processing are difficult to clean due to residual foreign matter, compromising the cleanliness of semiconductor substrates and support substrates after light irradiation release.
Innovation Solution
A release agent composition comprising a polymer with specific structural units that absorb light, incorporating a -Si-O-Si- structure and aromatic/heterocyclic rings, which forms a release agent layer with enhanced releasability and cleanability, allowing for easy separation of semiconductor substrates from support substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional release agent layer is used, then the semiconductor substrate can be released from the support substrate, but foreign matter such as adhesive layers and residues attach to the surfaces, making cleaning difficult
Solution Approach 1:
The patent uses a composite polymer structure containing three specific structural units: (1) light-absorbing structure for photoirradiation release, (2) siloxane structure (-Si-O-Si-) for cleanability, and (3) aromatic hydrocarbon or heterocyclic ring structure for adhesion control. This composite structure enables the release agent layer to provide excellent releasability while maintaining easy cleanability by combining the functional benefits of different molecular structures.
Solution Approach 2:
The patent specifies precise compositional parameters for the polymer, including the presence of three distinct structural units with specific chemical characteristics. By controlling the molecular structure parameters at the chemical level, the release agent achieves optimal balance between releasability and cleanability, allowing foreign matter to be easily removed after release.
2Strength
If the adhesion force is strong to withstand polishing stress, then the semiconductor wafer remains stable during polishing, but it becomes difficult to remove the wafer from the support after polishing
Solution Approach 1:
The patent creates a dynamic adhesion system where the release agent layer's adhesion properties change in response to external stimuli. Under normal conditions (before light irradiation), the layer maintains strong adhesion to withstand polishing stress. Upon light irradiation, the light-absorbing structural unit undergoes transformation that reduces adhesion force, enabling easy removal. This dynamic behavior resolves the contradiction between maintaining strong adhesion and enabling easy removal.
Solution Approach 2:
The patent utilizes photoinduced phase transition or chemical transformation in the light-absorbing structural unit. When irradiated with light of specific wavelength, the structural unit undergoes a change in its physical or chemical state, which transforms the adhesion characteristics of the release agent layer from strong to weak, facilitating easy removal of the semiconductor substrate from the support.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables effective release of semiconductor substrates with minimal residual contamination, ensuring high releasability and cleanability, thus improving the quality of processed semiconductor substrates.
Implementation Method 1
the first structure has a structure that absorbs light to impart releasability to a release agent layer formed from the release agent composition
Data Source
Figure 1~2B
Figure 2C~3
Figure 4~5B
AI summary
This release agent composition for release by irradiation with light includes a polymer and a solvent, the polymer including a first structure, a second structure, and a third structure, wherein the first structure has a structure that absorbs light to impart releasability to a release agent layer formed from the release agent composition, the second structure has a -Si-O-Si- structure in a main chain of the polymer, and the third structure has an aromatic hydrocarbon ring and/or a heterocyclic ring.