Photoresist Cleaning Composition for Residue Removal Without Pattern Collapse
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Solution Overview
Problem
Existing cleaning compositions for semiconductor substrates after photoresist patterning fail to effectively remove residues without collapsing the pattern, leading to increased line width roughness and potential damage.
Innovation Solution
A cleaning composition comprising an alkanol with 1 to 6 carbon atoms, an acetate compound, and water, which reduces surface tension and improves solubility, thereby preventing pattern collapse and enhancing residue removal efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If distilled water is used for cleaning the semiconductor substrate, then the cleaning composition can remove residues, but the pattern may collapse due to high surface tension
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning solution by adding alkanol (1-6 carbon atoms) and acetate compound to distilled water. This modifies the surface tension parameter of the cleaning composition, reducing it from the high surface tension of pure water to an optimized range that prevents pattern collapse while maintaining cleaning effectiveness.
Solution Approach 2:
The patent creates a composite cleaning composition by combining multiple substances: distilled water as the base, alkanol (1-6 carbon atoms) as a co-solvent, and acetate compound as an additive. This composite formulation synergistically reduces surface tension and improves wetting properties, preventing pattern collapse during the cleaning process.
2Object-generated harmful factors
If a cleaning composition with high surface tension is used, then the pattern may be collapsed, but the removal power against residues may be improved
Solution Approach 1:
The patent optimizes the surface tension parameter of the cleaning composition by controlling the concentration of alkanol (1-6 carbon atoms) and acetate compound. This parameter adjustment ensures the cleaning composition has sufficiently low surface tension to prevent pattern collapse while maintaining adequate residue removal capability.
Solution Approach 2:
The alkanol and acetate compound act as intermediary substances that mediate between the cleaning requirement and the pattern protection requirement. They reduce the surface tension of water, improving wetting and residue removal, while simultaneously preventing the harmful effect of high surface tension that causes pattern collapse.
3Device complexity
If distilled water is sprayed for cleaning, then the process is simple, but the line width roughness (LWR) of the pattern increases
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning solution to include alkanol (1-6 carbon atoms) and acetate compound in specific concentrations. This composition modification improves the wetting properties and reduces surface tension, enabling effective residue removal without increasing line width roughness, thereby maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively removes residues while maintaining pattern integrity, reducing line width roughness and surface tension, thus improving the reliability of photoresist pattern formation.
Implementation Method 1
A cleaning composition comprising an alkanol having 1 to 6 carbon atoms, an acetate compound, and water, wherein a content of water based on a total weight of the cleaning composition is 50% by weight to 95% by weight
Implementation Method 2
an alkanol having 1 to 6 carbon atoms; an acetate compound; and water
Data Source
AI summary
A cleaning composition includes an alkanol having 1 to 6 carbon atoms, an acetate compound and water. A content of water may be 50 wt % to 95 wt % based on a total weight of the cleaning composition. In a method of forming a photoresist pattern, a photoresist film is formed on a substrate, the photoresist film is partially removed to form a photoresist pattern, and the substrate on which the photoresist pattern is formed is cleaned using the cleaning composition.