Photoresist Composition for High Resolution Lithography

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Solution Overview

Problem

Current photoresist compositions face challenges in achieving high resolution and minimizing edge roughness, particularly at sub-half-micron geometries, which affects the lithographic performance and pattern transfer in semiconductor device manufacturing.

Innovation Solution

A novel photoresist composition incorporating a specific compound with an organic onium cation and an anion of the formula −O3S—CF2CF2OCF2—SO3−, combined with additional photoacid generators, is used, which enhances the sensitivity and edge acuity by optimizing the polymer and acid labile group interactions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If photoresist compositions are used for sub-half-micron geometries, then resolution is improved, but edge roughness increases

Engineering Contradiction:

Improvephotoresist resolutionVSAvoidedge roughness

Core Design Contradiction:

Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent changes the chemical parameters of the photoresist composition by introducing a specific photoacid generator with the formula Ai Xi Bi where Xi is an anion of −O3S—CF2CF2OCF2CF2—SO3−. This chemical parameter change enables high resolution imaging while controlling edge roughness through optimized acid generation characteristics

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses a composite photoresist system combining non-aromatic polymers with the specific photoacid generator compound. This composite material approach allows the system to achieve both high resolution and reduced edge roughness by synergistic interaction between the polymer matrix and the photoacid generator

Inventive Principle:

Principle #40Composite materials

2Manufacturing precision

If photoresist sensitivity is increased for better pattern transfer, then manufacturing precision is improved, but exposure latitude decreases

Engineering Contradiction:

Improvepattern transfer accuracyVSAvoidexposure latitude

Core Design Contradiction:

Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent optimizes the photoacid generator structure with specific anion formula −O3S—CF2CF2OCF2CF2—SO3− to achieve balanced acid generation efficiency. This parameter optimization enables the system to maintain good exposure latitude while achieving the sensitivity needed for accurate pattern transfer

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition improves the resolution and reduces edge roughness, enabling accurate pattern transfer with good exposure latitude and profile shape, suitable for deep UV exposure technologies.

Implementation Method 1

Photoresists sensitive to short wavelengths, between about 100 nm and about 300 nm are often used where subhalfmicron geometries are required. Particularly preferred are photoresists comprising non-aromatic polymers, a photoacid generator

Methodology Applied

Scientific EffectPhotochemical reaction: Photosynthesis

Data Source

PatentUS7390613B1Photoactive compounds

Publication Date: 2008.06.24 MERCK PATENT GMBH

AI summary

The present application relates to a compound of formula Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula −O3S—CF2CF2OCF2CF2—SO3−. The compounds are useful as photoactive materials.