Photoresist Composition for High Resolution and Dry-Etching Resistance
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Solution Overview
Problem
Current photoresist compositions for semiconductor microfabrication using lithography processes face challenges in achieving optimal resolution and dry-etching resistance, particularly when employing resins with acid-labile groups, as they often require specific chemical structures that are difficult to formulate effectively.
Innovation Solution
A photoresist composition comprising a resin with structural units derived from compounds having acid-labile groups, an acid generator, and a specific compound represented by formula (I), which is insoluble in alkali aqueous solutions but becomes soluble upon acid action, is applied to a substrate, formed into a film, exposed to radiation, baked, and developed with an alkaline developer to create a pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a resin with acid-labile groups is used to achieve pattern formation, then resolution is improved, but dry-etching resistance deteriorates
Solution Approach 1:
The patent uses a composite resin system combining multiple structural units: (1) units with acid-labile groups for pattern formation, (2) units providing dry-etching resistance, and (3) units enhancing focus margin. This composite approach allows simultaneous achievement of high resolution and dry-etching resistance that cannot be obtained with single-resin systems.
Solution Approach 2:
Different regions of the photoresist film have different chemical compositions tailored to local requirements. The resin contains specific structural units distributed throughout the film that provide localized functionality: acid-labile groups in regions requiring pattern definition, and etch-resistant units in regions requiring protection during dry-etching processes.
2Manufacturing precision
If specific chemical structures are employed to improve resolution, then pattern formation is enhanced, but formulation complexity increases
Solution Approach 1:
The resin is segmented into multiple functional structural units that can be independently selected and combined: (1) acid-labile group-containing units for pattern definition, (2) dry-etching resistant units, and (3) focus margin enhancing units. This segmentation allows systematic formulation optimization without overwhelming complexity.
Solution Approach 2:
The patent optimizes formulation by adjusting parameters such as the ratios of different structural units, molecular weight distributions, and concentrations of additives. By systematically varying these parameters within defined ranges, optimal performance is achieved while maintaining manageable formulation complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent resolution and enhanced dry-etching resistance, suitable for various lithography systems including ArF excimer laser, KrF excimer laser, EUV, and electron beam lithography, with improved focus margin and pattern formation.
Implementation Method 1
a compound represented by the formula (I): wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4
Implementation Method 2
a step of exposing the photoresist film to radiation
Implementation Method 3
a step of developing the baked photoresist film with an alkaline developer, thereby forming a photoresist pattern
Data Source
AI summary
The present invention provides a photoresist composition comprisinga resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid,an acid generator anda compound represented by the formula (I):wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4.