Photoresist Developer Composition for Low-Scum Pattern Development
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Solution Overview
Problem
The semiconductor industry faces challenges in reducing semiconductor feature size due to tight process windows in photolithographic processing, leading to increased line width roughness and defects caused by resist scum and residue in photoresist patterns.
Innovation Solution
A novel photoresist composition and developer system that includes a negative tone photoresist with cross-linking agents and specific solvents, such as those with Hansen solubility parameters and acid or base components, to reduce scum and residue, enhancing pattern definition and reducing defects during the photolithography process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional photolithographic processing is used to reduce semiconductor feature size, then device density increases, but line width roughness and defects increase due to resist scum and residue
Solution Approach 1:
The patent changes the chemical parameters of the developer composition by incorporating specific additives including chelating agents (e.g., EDTA, DTPA), surfactants, and dissolution inhibitors. These parameter changes optimize the developer's ability to dissolve exposed resist while minimizing scum and residue, thereby reducing line width roughness and improving manufacturing precision at smaller feature sizes
Solution Approach 2:
The patent uses a composite developer composition containing multiple functional components: solvents, bases or acids, chelating agents, surfactants, and dissolution inhibitors. This composite formulation works synergistically to achieve both high device density and low line width roughness by addressing multiple aspects of the development process simultaneously
2Productivity
If conventional photolithographic processing is used to reduce semiconductor feature size, then device density increases, but defects increase due to resist scum and residue
Solution Approach 1:
The patent modifies the chemical parameters of the developer by adding chelating agents that bind metal ions, surfactants that reduce surface tension, and dissolution inhibitors that control resist solubility. These parameter changes reduce defect formation by preventing scum and residue, thereby improving reliability while maintaining high device density
Solution Approach 2:
The chelating agents and surfactants in the developer composition act as intermediaries that facilitate the removal of resist material while preventing the formation of scum and residue. These intermediary substances mediate between the developer and the resist, ensuring clean development and reducing defects
3Productivity
If process window is tightened to enable smaller feature sizes, then device density increases, but manufacturing precision decreases due to increased line width roughness
Solution Approach 1:
The patent changes the physical and chemical parameters of the developer composition, including pH, solvent mix ratios, and additive concentrations. These parameter changes enable the developer to work effectively within tighter process windows, maintaining pattern definition quality even as feature sizes decrease and device density increases
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively minimizes resist scum and residue, improving semiconductor device yield and feature density by promoting better chemical reactions and solubility differences between exposed and unexposed regions, thus addressing the limitations of conventional photolithography techniques.
Implementation Method 1
a negative tone photoresist with cross-linking agents
Implementation Method 2
The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer
Data Source
AI summary
A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent, a second solvent, a surfactant, and at least one selected from an organic acid, an organic base, an inorganic acid, or an inorganic base. The first solvent and second solvent are different solvents.