Photoresist Developer Composition for Low-Scum Patterning
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the increasing line width roughness and defects caused by resist scum and residue in photolithographic processes, which hinders the miniaturization of semiconductor devices and reduces yield.
Innovation Solution
A novel photoresist composition and developer system that includes a negative tone photoresist with cross-linking agents and specific solvents, such as those with Hansen solubility parameters and acids or bases, to minimize residue and scum, enhancing pattern definition and reducing defects during the photolithography process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithographic materials and processes are used, then manufacturing process is simple, but line width roughness increases and defects occur due to resist scum and residue
Solution Approach 1:
The patent modifies the chemical composition parameters of the photoresist material by incorporating cross-linking agents and specific solvents with controlled Hansen solubility parameters. These parameter changes in the resist formulation enable reduced scum and residue formation, thereby improving line width roughness while managing process complexity
Solution Approach 2:
The invention uses composite photoresist materials containing multiple components including polymers, cross-linking agents, photoactive compounds, and specific solvents. This composite approach creates a synergistic effect that reduces resist scum and residue, improving manufacturing precision without excessively increasing process complexity
2Quantity of substance
If feature size is reduced to increase device density, then device density increases, but process window becomes tighter and defects increase
Solution Approach 1:
The patent changes the chemical and physical parameters of the photoresist system, including glass transition temperature, solubility parameters, and cross-linking density. These parameter modifications enable the resist to maintain stability and performance at smaller feature sizes, supporting increased device density while preserving process window tolerance
Solution Approach 2:
The cross-linking agents in the photoresist perform preliminary structural reinforcement before the actual patterning process. This preliminary action creates a more robust resist structure that can withstand the tighter process windows required for small feature sizes, preventing defects and enabling higher device density
3Manufacturing precision
If photoresist development is performed to create patterns, then pattern formation is achieved, but resist scum and residue remain causing defects
Solution Approach 1:
The patent converts the potentially harmful residue and scum by design into a beneficial outcome. The specific solvent system with controlled Hansen solubility parameters and cross-linking agents transforms incomplete dissolution into controlled removal, converting what would be harmful residue into clean pattern edges and eliminating defects
Solution Approach 2:
The invention modifies the dissolution parameters of the photoresist system by selecting specific solvents and controlling their concentrations. These parameter changes optimize the development process to achieve complete resist removal in exposed areas while preventing scum formation, thereby improving pattern definition and eliminating harmful residues
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces resist scum and residue, leading to improved semiconductor device feature density with reduced defects and increased efficiency in the photolithography process.
Implementation Method 1
A novel photoresist composition and developer system that includes a negative tone photoresist with cross-linking agents
Implementation Method 2
The latent pattern is developed by applying a developer composition to remove the uncrosslinked portion of the resist layer
Data Source
AI summary
A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15<δd<25, 10<δp<25, and 6<δh<30; an acid having an acid dissociation constant, pKa, of −15<pKa<5, or a base having a pKa of 40>pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.