Integrated Photoresist Development for Pattern Stability and Throughput
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Solution Overview
Problem
The integration of dry developing processes in photolithography increases equipment complexity and process time, leading to critical dimension defects in photoresist patterns, and existing systems require additional equipment compared to wet developing processes.
Innovation Solution
A substrate processing system that integrates both wet and dry developing processes within a single facility, utilizing a wet developing apparatus and a dry developing apparatus to selectively perform these processes, along with a cleaning apparatus and heating apparatus to enhance process efficiency and reduce equipment costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a dry developing process is used to improve the collapse margin of the photoresist pattern, then the pattern stability is improved, but the equipment complexity and process time increase
Solution Approach 1:
The patent combines both wet developing apparatus and dry developing apparatus within a single processing facility, allowing selective use of either developing method without requiring separate facilities. This merging approach enables the system to achieve the pattern stability benefits of dry developing while avoiding the need for completely separate equipment infrastructure.
Solution Approach 2:
The processing facility is designed with multi-functionality to accommodate both wet and dry developing processes using a single transfer chamber and support structure. This universal design allows the same facility to perform different developing methods selectively, reducing overall equipment complexity while maintaining the ability to improve pattern collapse margin when needed.
2Reliability
If a dry developing process is used to improve the collapse margin of the photoresist pattern, then the pattern stability is improved, but the process time is increased
Solution Approach 1:
The system dynamically selects between wet and dry developing processes based on the specific requirements of each photoresist pattern. By making the developing method selectable rather than fixed, the system can adapt to different situations - using dry developing when pattern stability is critical and wet developing when faster processing is needed, thus optimizing both reliability and time efficiency.
3Adaptability or versatility
If additional equipment is added for dry developing process, then the developing capability is improved, but the equipment cost and facility requirements increase
Solution Approach 1:
The patent merges wet and dry developing apparatus into a single integrated facility with a shared transfer chamber and substrate handling system. This combination allows the system to achieve enhanced developing capability through multiple methods while avoiding the need for completely separate equipment installations, thereby controlling equipment costs and facility requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Minimizes process delays, reduces equipment costs, and shortens turn-around time by integrating both developing processes in a single facility, while maintaining pattern integrity and reducing defects.
Implementation Method 1
the wet developing apparatus configured to remove the unnecessary region using a developing solution
Implementation Method 2
the dry developing apparatus configured to remove the unnecessary region using a developing gas
Implementation Method 3
a heating apparatus configured to heat the photoresist film or the photoresist pattern
Implementation Method 4
a cleaning apparatus including a single cleaning chamber that provides a space for (i) cleaning the semiconductor substrate with a cleaning gas and (ii) removing an edge bead
Data Source
AI summary
A substrate processing system includes a coating apparatus configured to coat a photoresist film on a semiconductor substrate, an exposure apparatus configured to irradiate light onto the photoresist film to form a photoresist pattern region, a developing system configured to remove an unnecessary region from the photoresist film except for the photoresist pattern region to form a photoresist pattern, the developing system including a wet developing apparatus and a dry developing apparatus, the wet developing apparatus configured to remove the unnecessary region using a developing solution, the dry developing apparatus configured to remove the unnecessary region using a developing gas, a cleaning apparatus including a cleaning chamber and configured to remove an edge bead of the photoresist film or the photoresist pattern on an edge region of the semiconductor substrate, and a heating apparatus configured to heat the photoresist film or the photoresist pattern.