Photoresist Drying Sequence to Prevent Pattern Collapse
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Solution Overview
Problem
Remaining water and developed material residues on the substrate interfere with subsequent etching processes, causing defects such as pinching and bridging in connection lines or pattern collapses during the development of resist patterns on semiconductor wafers.
Innovation Solution
A combination of spin drying operations using centrifugal force and controlled gas flow is employed to remove residual water and developed material from the substrate surface, enhancing the removal efficiency by adjusting spin speeds and gas flow pressures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If spin drying operation is performed to remove residues, then removal efficiency is improved, but pattern collapse and defects occur
Solution Approach 1:
A blow drying operation is performed before the spin drying operation to preliminarily remove developed material residues and water residues from the photoresist pattern. This preliminary action reduces the residue load before spin drying, preventing pattern collapse while ensuring thorough removal of contaminants
Solution Approach 2:
A blowing gas (intermediary substance) is introduced to blow dry the photoresist pattern between the water rinsing and spin drying operations. This intermediary step uses gas flow to remove residues gently without the mechanical stress of immediate spin drying, preventing pattern collapse
2Loss of substance
If gas flow pressure is increased to remove residues, then removal efficiency is improved, but pattern collapse occurs
Solution Approach 1:
The blow drying operation with controlled gas flow is performed before spin drying to preliminarily remove residues. This preliminary action reduces the residue load before the higher pressure spin drying, enabling effective residue removal without causing pattern collapse
Solution Approach 2:
The drying process is divided into periodic stages: water rinsing, blow drying with gas flow, and spin drying. Each stage uses different pressure levels and mechanisms, allowing residues to be removed progressively without subjecting the pattern to excessive force at any single stage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces the number of defects in etched patterns by ensuring thorough removal of residues, thereby improving the quality of semiconductor manufacturing processes.
Implementation Method 1
spin drying operations using centrifugal force
Implementation Method 2
controlled gas flow
Data Source
AI summary
A method for manufacturing a semiconductor device includes forming a photoresist layer that includes a photoresist composition over a wafer to produce a photoresist-coated wafer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern in the photoresist layer. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer under a first pressure gas flow setting in a development chamber. The photoresist layer is rinsed, under the first pressure gas flow setting, to form a patterned photoresist layer exposing a portion of the wafer in the development chamber. The patterned photoresist layer is spin dried under a second pressure gas flow setting. A pressure of the development chamber under the second pressure gas flow setting is greater than the pressure of the development chamber under the first pressure gas flow setting.