Photoresist Patterning With Ozone Residue Removal for Precise Etching

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Solution Overview

Problem

The existing methods for forming patterns using a photoresist layer as an etching mask often result in decreased accuracy due to residual organic material from the photoresist layer being transferred to the etching object layer, affecting the shape and precision of the formed patterns.

Innovation Solution

A method involving the formation of a photoresist layer with metal, oxygen, and organic material, followed by an exposure process to create a metal oxide, and subsequent use of ozone and UV heat to remove the organic residue, ensuring accurate pattern formation by preventing residue transfer during the etching process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a photoresist layer is used as an etching mask, then the pattern can be formed, but organic residue from the photoresist layer is transferred to the etching object layer, decreasing pattern accuracy

Engineering Contradiction:

Improvepattern accuracyVSAvoidorganic residue transfer

Core Design Contradiction:

Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent applies preliminary action by performing an ozone treatment process on the photoresist layer before the etching process. This preliminary oxidation converts the organic material in the photoresist layer to metal oxide, preventing the organic residue from being transferred to the etching object layer during subsequent etching operations, thereby maintaining pattern accuracy

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent changes the chemical state of the photoresist layer by exposing it to ozone, which oxidizes the organic material. This parameter change transforms the photoresist composition from containing organic material to containing metal oxide, eliminating the harmful organic residue transfer while preserving the mask function

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances pattern accuracy by completely removing organic residues, allowing for precise transfer of the desired pattern shape from the photoresist mask to the etching object layer, thereby improving the overall precision of the pattern formation process.

Implementation Method 1

Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material

Methodology Applied

Scientific EffectOxidation: Oxidation

Implementation Method 2

UV and heat is provided onto the substrate to remove a residue of the photoresist layer, the residue including the organic material

Methodology Applied

Scientific EffectPhotodecomposition: Photodissociation

Implementation Method 3

UV and heat is provided onto the substrate to remove a residue of the photoresist layer

Methodology Applied

Scientific EffectThermal decomposition: Pyrolysis

Data Source

PatentUS12051590B2Method of forming a pattern

Publication Date: 2024.07.30 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material. The etching object layer is etched using the photoresist pattern as an etching mask.