Photoresist Polymer Composition for Low-Roughness EUV Patterning
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Solution Overview
Problem
Conventional chemically amplified photoresist materials exhibit high pattern roughness and poor pattern fidelity, leading to poor device performance in extreme ultraviolet lithography, especially at advanced device nodes.
Innovation Solution
A polymer comprising a first repeating unit derived from a polymerizable compound with specific substituent groups and a second repeating unit containing a base-labile group, used in a photoresist composition to improve lithographic performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified photoresist materials are used for extreme ultraviolet lithography, then the photoresist can be processed at advanced device nodes, but the patterns exhibit high pattern roughness and poor pattern fidelity
Solution Approach 1:
The patent modifies the chemical composition parameters of the photoresist by incorporating specific polymer structures with controlled molecular weights, functional group densities, and side-chain architectures. These parameter changes optimize the photoresist's response to extreme ultraviolet radiation, reducing stochastic effects and improving pattern fidelity while minimizing line-width roughness at advanced device nodes
Solution Approach 2:
The patent employs composite photoresist formulations combining multiple polymer components with complementary functions: a main polymer matrix providing structural integrity, and functional additives including base-labile groups and specific repeating units that enhance pattern fidelity. This composite approach synergistically improves both manufacturing precision and reliability by addressing multiple performance requirements simultaneously
2Manufacturing precision
If multiple patterning techniques are used to achieve nm-scale feature sizes, then the lithographic resolution is improved, but the material usage and number of process steps increase
Solution Approach 1:
The patent incorporates pre-functionalized polymer structures with base-labile groups and specifically designed repeating units that enable single-step direct imaging at nm-scale resolutions. This preliminary preparation of the photoresist composition with optimized molecular architecture allows direct patterning without requiring multiple exposure and development cycles, thereby improving productivity while maintaining high lithographic resolution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer enhances pattern fidelity and reduces line-width roughness, improving the performance of photoresist compositions for advanced semiconductor manufacturing.
Implementation Method 1
A layer of the photoresist composition is pattern-wise exposed to activating radiation and the PAG generates an acid in the exposed regions
Implementation Method 2
In a positive tone development (PTD) process, exposed regions of the photoresist layer become soluble in a developer, typically an aqueous base developer
Data Source
AI summary
A polymer comprising a first repeating unit derived from a polymerizable compound comprising an aromatic group, wherein the aromatic group is substituted with: a first substituent group comprising an ethylenically unsaturated double bond; a second substituent group that is a hydroxyl group; and a third substituent group comprising a carbonyl group, wherein the first substituent group, the second substituent group, and the carbonyl group of the third substituent group are each bonded to a different carbon atom of the aromatic group; and a second repeating unit comprising a base-labile group, wherein the first repeating unit and the second repeating unit are structurally different.