Selective Photoresist Reshaping for Critical Dimension Control
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Solution Overview
Problem
Conventional methods fail to produce photoresist patterns with desired critical dimensions and heights for small-scale semiconductor fabrication, leading to nonuniformities and inefficiencies in patterning and etching processes.
Innovation Solution
The technology involves selective molecular layer deposition on photoresist patterns to form re-shaped materials with increased thickness or height, allowing for precise control over sidewall and top surface deposition, using a sequential process of molecular species coupling to form carbon-containing layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresist patterning methods are used, then the patterning process is simple, but the critical dimension control and height uniformity are insufficient for small-scale fabrication
Solution Approach 1:
The patterning process is segmented into multiple sequential deposition steps, where different molecular species are deposited in alternating cycles to build up the photoresist pattern layer by layer. This allows precise control over critical dimensions and height by adjusting the number of cycles and deposition parameters for each segment
Solution Approach 2:
A foundation layer is deposited first to prepare the substrate surface before subsequent patterned layers are formed. This preliminary action ensures uniform nucleation and adhesion for the photoresist material, establishing a controlled base for achieving precise critical dimensions in the final pattern
2Strength
If photoresist material is deposited to increase height, then the etching protection is improved, but the critical dimension between adjacent features increases
Solution Approach 1:
The deposition process applies different deposition conditions to different regions of the substrate. By controlling precursor flow rates, temperature gradients, and plasma distribution, the process achieves uniform height increase across the photoresist pattern while maintaining or reducing critical dimensions through localized material accumulation control
3Manufacturing precision
If multiple deposition cycles are used to control thickness, then the manufacturing precision is improved, but the processing time increases
Solution Approach 1:
The deposition process maintains continuous useful action by eliminating idle time between cycles. The substrate remains in the deposition chamber throughout the entire multi-cycle process, with only brief purge intervals between alternating molecular species deposits. This continuous processing approach achieves precise thickness control through multiple thin layers without the time penalty of repeated chamber loading and unloading
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of re-shaped photoresist patterns with tailored thicknesses and heights, facilitating precise etching and reducing critical dimensions, thus improving the accuracy and efficiency of semiconductor processing.
Implementation Method 1
providing a first molecular species that selectively couples with the photoresist material
Implementation Method 2
providing a second molecular species that selectively couples with the first molecular species
Implementation Method 3
forming a selective layer of carbon-containing material on a photoresist material... forming includes one or more cycles of providing a first molecular species that selectively couples with the photoresist material and providing a second molecular species that selectively couples with the first molecular species
Data Source
AI summary
Methods and systems for semiconductor processing are provided. Methods and systems include forming a selective layer of carbon-containing material on a photoresist material disposed over a surface of a substrate within a processing region of a semiconductor processing chamber. Methods and systems include where the layer of carbon-containing material is selectively formed over the photoresist material. Methods and systems include forming the layer of carbon-containing material by using one or more cycles of: providing a first molecular species that selectively couples with the photoresist material, and providing a second molecular species that selectively couples with the first molecular species.